METHOD OF INSPECTING SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20230266258A1

    公开(公告)日:2023-08-24

    申请号:US18113121

    申请日:2023-02-23

    CPC classification number: G01N23/2251 G01N2223/6116 G01N2223/646

    Abstract: A method of inspecting a semiconductor device includes charging an inspection region of a semiconductor device using a charging electron beam, and scanning the inspection region using a scanning electron beam. The charging of the inspection region includes dividing the inspection region into a charging region and a non-charging region, and charging the charging region using the charging electron beam. The scanning of the inspection region includes irradiating the scanning electron beam to the inspection region, and detecting secondary electrons emitted from the inspection region by the scanning electron beam.

    SUBSTRATE INSPECTION APPARATUS AND SUBSTRATE INSPECTION METHOD

    公开(公告)号:US20240175915A1

    公开(公告)日:2024-05-30

    申请号:US18203138

    申请日:2023-05-30

    CPC classification number: G01R31/2853 G01R31/287

    Abstract: In a substrate inspection method, a substrate is provided on a substrate stage, the substrate having internal wires and connection wires, the internal wires respectively provided between stacked insulating layers, the connection wires respectively extending from the internal wires and exposed to an upper surface of the substrate. An electric circuit of the internal wires in the substrate is modeled to generate a circuit model. AC power is applied to the substrate stage to obtain measured capacitance values of the internal wires through currents that are obtained from the connection wires. DC power is applied to the substrate stage to obtain measured resistance values of the internal wires through voltages that are obtained from the connection wires. Impedance values of the internal wires are calculated through the measured capacitance values and the measured resistance values. The impedance values and the circuit model are compared to determine reliability of the substrate.

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