公开(公告)号：US20240371876A1

公开(公告)日：2024-11-07

申请号：US18775521

申请日：2024-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

公开(公告)号：US20220262797A1

公开(公告)日：2022-08-18

申请号：US17511923

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L29/417 ,  H01L23/528 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

公开(公告)号：US12068323B2

公开(公告)日：2024-08-20

申请号：US17511923

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/0924 ,  H01L23/528 ,  H01L29/0665 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.