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公开(公告)号:US12068323B2
公开(公告)日:2024-08-20
申请号:US17511923
申请日:2021-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Deok Han Bae , Ju Hun Park , Myung Yoon Um , Ye Ji Lee , Yoon Young Jung
IPC: H01L27/092 , H01L23/528 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/786
CPC classification number: H01L27/0924 , H01L23/528 , H01L29/0665 , H01L29/41791 , H01L29/42392 , H01L29/78696
Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.
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公开(公告)号:US12224315B2
公开(公告)日:2025-02-11
申请号:US17516900
申请日:2021-11-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju Hun Park , Won Cheol Jeong , Jin Wook Kim , Deok Han Bae , Myung Yoon Um , In Yeal Lee , Yoon Young Jung
Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.
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公开(公告)号:US11705497B2
公开(公告)日:2023-07-18
申请号:US17185466
申请日:2021-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: In Yeal Lee , Yoon Young Jung , Jin-Wook Kim , Deok Han Bae , Myung Yoon Um
IPC: H01L29/423 , H01L29/786 , H01L29/06 , H01L29/51
CPC classification number: H01L29/42392 , H01L29/0673 , H01L29/512 , H01L29/78696
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.
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公开(公告)号:US20240371876A1
公开(公告)日:2024-11-07
申请号:US18775521
申请日:2024-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Deok Han Bae , Ju Hun Park , Myung Yoon Um , Ye Ji Lee , Yoon Young Jung
IPC: H01L27/092 , H01L23/528 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/786
Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.
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公开(公告)号:US20220262797A1
公开(公告)日:2022-08-18
申请号:US17511923
申请日:2021-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Deok Han Bae , Ju Hun Park , Myung Yoon Um , Ye Ji Lee , Yoon Young Jung
IPC: H01L27/092 , H01L29/417 , H01L23/528 , H01L29/423 , H01L29/786 , H01L29/06
Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.
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