公开(公告)号：US12068323B2

公开(公告)日：2024-08-20

申请号：US17511923

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/0924 ,  H01L23/528 ,  H01L29/0665 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

公开(公告)号：US12224315B2

公开(公告)日：2025-02-11

申请号：US17516900

申请日：2021-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hun Park ,  Won Cheol Jeong ,  Jin Wook Kim ,  Deok Han Bae ,  Myung Yoon Um ,  In Yeal Lee ,  Yoon Young Jung

IPC: H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US11705497B2

公开(公告)日：2023-07-18

申请号：US17185466

申请日：2021-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Yeal Lee ,  Yoon Young Jung ,  Jin-Wook Kim ,  Deok Han Bae ,  Myung Yoon Um

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/51

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/512 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.

公开(公告)号：US20240371876A1

公开(公告)日：2024-11-07

申请号：US18775521

申请日：2024-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

公开(公告)号：US20220262797A1

公开(公告)日：2022-08-18

申请号：US17511923

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L29/417 ,  H01L23/528 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.