公开(公告)号：US10559506B2

公开(公告)日：2020-02-11

申请号：US16113554

申请日：2018-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kook Kim ,  Jun Chul Kim ,  Myung Suk Um ,  Yu Sin Yang ,  Ye Ny Yim

IPC: H01L21/66 ,  G01B15/00 ,  H01L21/263 ,  H01L21/687 ,  G06T7/00 ,  G06T3/60 ,  G06T7/60 ,  G06T7/73

Abstract: A method of inspecting a semiconductor device including setting a target place on a wafer, the target place including a deep trench, forming a first cut surface by performing first milling on the target place in a first direction, obtaining first image data of the first cut surface, forming a second cut surface by performing second milling on the target place in a second direction opposite to the first direction, obtaining second image data of the second cut surface, obtaining a plurality of first critical dimension (CD) values for the deep trench from the first image data, obtaining a plurality of second CD values for the deep trench from the second image data, analyzing a degree of bending of the deep trench based on the first CD values and the second CD values, and providing the semiconductor device meeting a condition based on results of the analyzing may be provided.