公开(公告)号：US10559506B2

公开(公告)日：2020-02-11

申请号：US16113554

申请日：2018-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kook Kim ,  Jun Chul Kim ,  Myung Suk Um ,  Yu Sin Yang ,  Ye Ny Yim

IPC: H01L21/66 ,  G01B15/00 ,  H01L21/263 ,  H01L21/687 ,  G06T7/00 ,  G06T3/60 ,  G06T7/60 ,  G06T7/73

Abstract: A method of inspecting a semiconductor device including setting a target place on a wafer, the target place including a deep trench, forming a first cut surface by performing first milling on the target place in a first direction, obtaining first image data of the first cut surface, forming a second cut surface by performing second milling on the target place in a second direction opposite to the first direction, obtaining second image data of the second cut surface, obtaining a plurality of first critical dimension (CD) values for the deep trench from the first image data, obtaining a plurality of second CD values for the deep trench from the second image data, analyzing a degree of bending of the deep trench based on the first CD values and the second CD values, and providing the semiconductor device meeting a condition based on results of the analyzing may be provided.

公开(公告)号：US09934939B2

公开(公告)日：2018-04-03

申请号：US14464325

申请日：2014-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kook Kim ,  Woo Seok Ko ,  Yu Sin Yang ,  Sang Kil Lee ,  Chung Sam Jun

IPC: H01J37/28 ,  H01J37/22 ,  G01N23/22 ,  G03F7/20 ,  G01N23/203 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/203 ,  G01N23/22 ,  G01N23/2206 ,  G01N23/2251 ,  G03F7/70633 ,  H01J37/222 ,  H01J2237/063 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

公开(公告)号：US20150115154A1

公开(公告)日：2015-04-30

申请号：US14464325

申请日：2014-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kook Kim ,  Woo Seok Ko ,  Yu Sin Yang ,  Sang Kil Lee ,  Chung Sam Jun

IPC: H01J37/28 ,  G01B15/00 ,  H01J37/22

CPC classification number: H01J37/28 ,  G01N23/203 ,  G01N23/22 ,  G01N23/2206 ,  G01N23/2251 ,  G03F7/70633 ,  H01J37/222 ,  H01J2237/063 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

Abstract translation: 使用扫描电子显微镜系统测量覆盖偏移的方法包括：使用具有至少10kV的着陆能量的一次电子束扫描包括下部结构和堆叠在样品中的上部结构的单元格区域 ; 检测从扫描的单元格区域发射的电子; 以及使用基于从扫描的单元格区域发射的检测到的电子产生的单元格区域的图像，测量相对于包含在单元格区域中的重叠图案的覆盖偏移。