公开(公告)号：US20240292129A1

公开(公告)日：2024-08-29

申请号：US18399145

申请日：2023-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeokjong LEE ,  Yunjung KIM ,  Sungwook JUN ,  Yeongseok CHOI ,  Minho KWON ,  Mooyoung KIM ,  Yunhong KIM

IPC: H04N25/772 ,  H04N25/60 ,  H04N25/709 ,  H04N25/76 ,  H04N25/79

CPC classification number: H04N25/772 ,  H04N25/60 ,  H04N25/709 ,  H04N25/7795 ,  H04N25/79

Abstract: An image sensor includes a first chip including a pixel array including a plurality of pixels, and a second chip including a peripheral circuit configured to drive the pixel array and process a pixel signal output from the pixel array, where the first chip and the second chip are stacked, the peripheral circuit is implemented with a plurality of field effect transistors (FETs), and at least one channel structure of each of the plurality of FETs all extend in a same direction.

公开(公告)号：US20240282788A1

公开(公告)日：2024-08-22

申请号：US18487430

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongseok CHOI ,  Hyeokjong LEE ,  Kyunghoon KIM

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14636

Abstract: Provided are an integrated circuit having a structure advantageous to scaling by eliminating a dummy region of a semiconductor device and an image sensor including the integrated circuit. The integrated circuit may comprise at least one cell, a planar transistor, and a vertical transistor. The at least one cell may comprise a first active region and a second active region adjacent to each other, at least one first active fin on the first active region and extending in a first direction, at least one second active fin on the second active region and extending in the first direction, and an active gate line vertically overlapping the first active region and the second active region and extending in a second direction perpendicular to the first direction.