Abstract:
A gray code-to-binary code converter includes multiple parallel-in parallel-out (PIPO) latches, each of the multiple PIPO latches configured to output a parallel output gray code by latching a parallel input gray code in response to a sampling signal, and a parallel-in serial-out (PISO) circuit including a first group of switches, the PISO circuit configured to convert the parallel output gray code, which is latched in the multiple PIPO latches, into a binary code, and sequentially output bits of the binary code in units of bit, from a least significant bit (LSB) of the binary code to a most significant bit (MSB) of the binary code, while changing an arrangement of the first group of switches.
Abstract:
An image sensor including: a plurality of phase shift code generators, wherein each of the plurality of phase shift code generators outputs a phase shift code; a test data selection circuit for outputting test data corresponding to a test pattern; a counter for receiving the phase shift code from at least one of the plurality of phase shift code generators, receiving the test data from the test data selection circuit, latching a digital code corresponding to the test pattern using the phase shift code, and outputting the digital code; and a control logic for calculating a data pattern using the digital code and selecting one of the plurality of phase shift code generators in accordance with a result of a comparison between the data pattern and the test pattern.
Abstract:
An image sensor in accordance with exemplary embodiments of the inventive concept may include a pixel sensor array which includes an active pixel sensor and an optical black pixel sensor; a first analog to digital converter configured to convert a first sensing signal, which is provided from the active pixel sensor, to a first digital signal; a second analog to digital converter configured to convert a second sensing signal, which is provided from the optical black pixel sensor, to a second digital signal; and an output buffer configured to temporarily store and output the first digital signal and the second digital signal, wherein a plurality of noise characteristics of the second analog to digital converter is different from a plurality of noise characteristics of the first analog to digital converter.
Abstract:
An image sensor includes a first chip including a pixel array including a plurality of pixels, and a second chip including a peripheral circuit configured to drive the pixel array and process a pixel signal output from the pixel array, where the first chip and the second chip are stacked, the peripheral circuit is implemented with a plurality of field effect transistors (FETs), and at least one channel structure of each of the plurality of FETs all extend in a same direction.
Abstract:
An image sensor includes a pixel configured to operate in a high conversion gain (HCG) mode and a low conversion gain (LCG) mode during a readout period, and a correlated double sampling (CDS) circuit configured to generate a comparison signal based on a ramp signal and a pixel voltage received from the pixel, wherein the CDS circuit includes a comparator configured to: receive the pixel voltage through a first input node, receive the ramp signal through a second input node based on an LCG reset signal or an LCG image signal being received as the pixel voltage, and receive the ramp signal through a third input node based on an HCG reset signal or an HCG image signal being received as the pixel voltage; and compare the ramp signal to the pixel voltage, and output the comparison signal corresponding to a comparison result.
Abstract:
Provided is a semiconductor device. The semiconductor device includes a first counter latch circuit configured to receive a count code and to latch the count code according to a comparison result signal; and a second counter latch circuit configured to receive the count code from the first counter latch circuit, and to latch the count code by using a plurality of first latches. The first latches are coupled in series to each other and are configured to operate to sequentially bypass values transmitted to the respective first latches.
Abstract:
Provided are an integrated circuit having a structure advantageous to scaling by eliminating a dummy region of a semiconductor device and an image sensor including the integrated circuit. The integrated circuit may comprise at least one cell, a planar transistor, and a vertical transistor. The at least one cell may comprise a first active region and a second active region adjacent to each other, at least one first active fin on the first active region and extending in a first direction, at least one second active fin on the second active region and extending in the first direction, and an active gate line vertically overlapping the first active region and the second active region and extending in a second direction perpendicular to the first direction.
Abstract:
A correlated double sampling (CDS) circuit, an operating method thereof, and an image sensor including the CDS circuit are disclosed. The CDS circuit includes a first comparator configured to operate based on a first bias current, and compare, with a ramp signal, a pixel voltage that is output from a pixel, during a first period and a fourth period during which the pixel operates in a low conversion gain (LCG) mode, a second comparator configured to operate based on a second bias current, and compare, with the ramp signal, the pixel voltage output from the pixel, during a second period and a third period during which the pixel operates in a high conversion gain (HCG) mode, the second period being after the first period, the third period being after the second period, and the fourth period being after the third period.
Abstract:
An image sensor including: a plurality of phase shift code generators, wherein each of the plurality of phase shift code generators outputs a phase shift code; a. test data selection circuit for outputting test data corresponding to a test pattern; a counter for receiving the phase shift code from at least one of the plurality of phase shift code generators, receiving the test data from the test data selection circuit, latching a digital code corresponding to the test pattern using the phase shift code, and outputting the digital code; and a control logic for calculating a data pattern using the digital code and selecting one of the plurality of phase shift code generators in accordance with a result of a comparison between the data pattern and the test pattern.
Abstract:
An image sensor includes a pixel sensor outputting an analog sampling signal; a sampling unit comparing the sampling signal and a ramp signal, and outputting a comparison signal that is time-axis length information; and a counter counting a length of the comparison signal based on a clock signal and first and second complement control signals. The counter includes an AND gate ANDing the comparison signal and the clock signal; and a counting unit triggered at a falling edge of the AND gate output to output a count value. The counting unit includes a complement operation controller storing an inverted count value that is an inversion of the count value in response to the first complement control signal, and outputting the inverted count value in response to the second complement control signal; and a D-flip-flop that is set or reset depending on the inverted count value, and outputs the count value.