公开(公告)号：US10431685B2

公开(公告)日：2019-10-01

申请号：US15404673

申请日：2017-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Gi-gwan Park ,  Tae-young Kim ,  Yi-young Na ,  Dae-hee Kim

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate; a gate insulating film covering a top surface and both side walls of the fin-shaped active region; a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film; one pair of insulating spacers on both side walls of the gate electrode; and a source region and a drain region on the substrate and respectively located on sides of the gate electrode. The source region and the drain region form a source/drain pair. The one pair of insulating spacers include protrusions that protrude from upper portions of the one pair of insulating spacers toward the gate electrode.