公开(公告)号：US08648408B2

公开(公告)日：2014-02-11

申请号：US13753588

申请日：2013-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Kuk Jeong ,  Sang-Wook Park ,  Min-Hee Choi

IPC: H01L21/02

CPC classification number: H01L29/7831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/823807 ,  H01L21/8258 ,  H01L23/291 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, a gate structure disposed on the substrate and which includes a gate insulating layer and a gate electrode layer, a first nitride layer disposed on the substrate and the gate structure and which includes silicon, and a second nitride layer that is disposed on the first nitride layer and has an atomic percentage of silicon less than that of the first nitride layer.

Abstract translation: 半导体器件包括衬底，设置在衬底上的栅极结构，其包括栅极绝缘层和栅极电极层，设置在衬底上的第一氮化物层和栅极结构，并且包括硅;以及第二氮化物层， 设置在第一氮化物层上，并且硅的原子百分比小于第一氮化物层的原子百分比。