公开(公告)号：US09054228B2

公开(公告)日：2015-06-09

申请号：US14160008

申请日：2014-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Kyoung Choi ,  Jong-Youn Kim ,  Sang-Wook Park ,  Hae-Jung Yu ,  In-Young Lee ,  Sang-Uk Han ,  Ji-Seok Hong

IPC: H01L23/02 ,  H01L23/34 ,  H01L23/00 ,  H01L23/36 ,  H01L23/373 ,  H01L23/433 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/97 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/4334 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: Semiconductor packages including a heat spreader and methods of forming the same are provided. The semiconductor packages may include a first semiconductor chip, a second semiconductor chip, and a heat spreader stacked sequentially. The semiconductor packages may also include a thermal interface material (TIM) layer surrounding the second semiconductor chip and directly contacting a sidewall of the second semiconductor chip. An upper surface of the TIM layer may directly contact a lower surface of the heat spreader, and a sidewall of the TIM layer may be substantially coplanar with a sidewall of the heat spreader. In some embodiments, a sidewall of the first semiconductor chip may be substantially coplanar with the sidewall of the TIM layer.

Abstract translation: 提供了包括散热器的半导体封装及其形成方法。 半导体封装可以包括顺序堆叠的第一半导体芯片，第二半导体芯片和散热器。 半导体封装还可以包括围绕第二半导体芯片并直接接触第二半导体芯片的侧壁的热界面材料（TIM）层。 TIM层的上表面可以直接接触散热器的下表面，并且TIM层的侧壁可以与散热器的侧壁基本上共面。 在一些实施例中，第一半导体芯片的侧壁可以与TIM层的侧壁基本共面。

公开(公告)号：US10242921B2

公开(公告)日：2019-03-26

申请号：US15355193

申请日：2016-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wook Park ,  Heung-Kook Ko ,  No-Young Chung

IPC: G06F17/50 ,  H01L21/66 ,  G06T7/00 ,  G06K9/00 ,  H01L21/027 ,  G06K9/52 ,  G06F19/00

Abstract: The method includes classifying sample pattern data into a standard normal group and a standard weak group based on a first criterion. The method further includes extracting a normal group determination function by calculating an image parameter with respect to each piece of sample pattern data included in the standard normal group, and extracting a weak group determination function by calculating the image parameter with respect to each piece of sample pattern data included in the standard weak group. The method also includes classifying the object pattern data into a normal group and a weak group by calculating the image parameter with respect to object pattern data based on a first proximity between the normal group determination function and the object pattern data and a second proximity between the weak group determination function and the object pattern data.

公开(公告)号：US20140291854A1

公开(公告)日：2014-10-02

申请号：US14041169

申请日：2013-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teak-Hoon Lee ,  Ji-Hwang Kim ,  Sang-Wook Park ,  Young-Kun Jee

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L25/0657 ,  H01L2224/13 ,  H01L2224/73204 ,  H01L2924/15174 ,  H01L2924/15311

Abstract: A semiconductor package includes a first semiconductor chip on a substrate and having a plurality of through-silicon vias (TSVs). A second semiconductor chip having an active layer is on the first semiconductor chip. An adhesive layer is between the first semiconductor chip and the active layer. Connection terminals extend through the adhesive layer and are connected to the TSVs and the active layer. Side surfaces of the adhesive layer are aligned with side surfaces of the second semiconductor chip.

Abstract translation: 半导体封装包括在衬底上的第一半导体芯片，并且具有多个穿硅通孔（TSV）。 具有有源层的第二半导体芯片在第一半导体芯片上。 粘合剂层位于第一半导体芯片和有源层之间。 连接端子延伸穿过粘合剂层并连接到TSV和有源层。 粘合剂层的侧表面与第二半导体芯片的侧表面对齐。

公开(公告)号：US20140268171A1

公开(公告)日：2014-09-18

申请号：US14094256

申请日：2013-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Don Jang ,  Sang-Wook Park ,  Oui-Serg Kim ,  Hi-Kuk Lee ,  In-Bae Chang

IPC: G01B11/14

CPC classification number: G01N21/00 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/0106 ,  G01N2021/8461

Abstract: A stage device includes a stage configured to move in an X-axis direction and a Y-axis direction, an X-axis interference reflector spaced apart from the stage in the X-axis direction, a first X-axis interferometer disposed on the stage that is configured to measure an X-axis location of the stage using the X-axis interference reflector, and an optical movable element spaced apart from the stage in the Y-axis direction that is configured to shift in the X-axis direction a path of a light beam propagating in the Y-axis direction according to movement of the stage in the X-axis direction.

Abstract translation: 舞台装置包括被配置为在X轴方向和Y轴方向上移动的台架，与X轴方向上与舞台间隔开的X轴干涉反射镜，设置在舞台上的第一X轴干涉仪 其被配置为使用X轴干涉反射器测量所述平台的X轴位置，以及与所述载物台沿Y轴方向隔开的光学可动元件，所述光学可动元件被构造成在X轴方向上移动路径 根据载物台在X轴方向的移动而沿Y轴方向传播的光束。

公开(公告)号：US12256567B2

公开(公告)日：2025-03-18

申请号：US17851857

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wook Park ,  Yun Kyoung Song ,  Bong Keun Kim ,  Se Jin Park

IPC: H10D84/01 ,  H10D30/43 ,  H10D30/67 ,  H10D62/10 ,  H10D62/13 ,  H10D64/23 ,  H10D84/03 ,  H10D84/83

Abstract: A semiconductor device includes a first active pattern that extends in a first horizontal direction, a second active pattern which extends in the first horizontal direction, and is spaced apart from the first active pattern by a first distance in a second horizontal direction, a third active pattern which extends in the first horizontal direction, and is spaced apart from the second active pattern by a second distance greater than the first distance in the second horizontal direction, a first gate electrode which extends in the second horizontal direction on the first to third active patterns, a second gate electrode which extends in the second horizontal direction on the first and second active patterns, and is spaced apart from the first gate electrode in the first horizontal direction, a first gate contact and a second gate contact which extends in the second horizontal direction on the second gate electrode.

公开(公告)号：US20220207228A1

公开(公告)日：2022-06-30

申请号：US17522185

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-Min Jung ,  Kyo Il Koo ,  Sang-Wook Park

IPC: G06F30/392 ,  G06F30/398

Abstract: Provided is a method of manufacturing a semiconductor device. the method comprises receiving layout data including a plurality of pieces of pattern data, the plurality of pieces of pattern data having through first to Nth unique patterns (N is a natural number greater than or equal to two), calculating first to Nth density values of the first to Nth unique patterns from the layout data and calculating first to Nth populations of the first to Nth unique patterns from the layout data, performing sampling by selecting some unique patterns among the first to Nth unique patterns, the selecting based on the first to Nth density values and the first to Nth populations, and performing etch modeling on sampled patterns of the plurality of pieces of pattern data, the sampled patterns corresponding to the selected unique patterns.

公开(公告)号：US09159651B2

公开(公告)日：2015-10-13

申请号：US14041169

申请日：2013-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teak-Hoon Lee ,  Ji-Hwang Kim ,  Sang-Wook Park ,  Young-Kun Jee

IPC: H01L23/40 ,  H01L23/52 ,  H01L29/40 ,  H01L23/48

CPC classification number: H01L23/481 ,  H01L25/0657 ,  H01L2224/13 ,  H01L2224/73204 ,  H01L2924/15174 ,  H01L2924/15311

Abstract: A semiconductor package includes a first semiconductor chip on a substrate and having a plurality of through-silicon vias (TSVs). A second semiconductor chip having an active layer is on the first semiconductor chip. An adhesive layer is between the first semiconductor chip and the active layer. Connection terminals extend through the adhesive layer and are connected to the TSVs and the active layer. Side surfaces of the adhesive layer are aligned with side surfaces of the second semiconductor chip.

Abstract translation: 半导体封装包括在衬底上的第一半导体芯片，并且具有多个通硅通孔（TSV）。 具有有源层的第二半导体芯片在第一半导体芯片上。 粘合剂层位于第一半导体芯片和有源层之间。 连接端子延伸穿过粘合剂层并连接到TSV和有源层。 粘合剂层的侧表面与第二半导体芯片的侧表面对齐。

公开(公告)号：US09086352B2

公开(公告)日：2015-07-21

申请号：US14094256

申请日：2013-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Don Jang ,  Sang-Wook Park ,  Oui-Serg Kim ,  Hi-Kuk Lee ,  In-Bae Chang

IPC: G01B11/02 ,  G01N21/00

CPC classification number: G01N21/00 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/0106 ,  G01N2021/8461

Abstract: A stage device includes a stage configured to move in an X-axis direction and a Y-axis direction, an X-axis interference reflector spaced apart from the stage in the X-axis direction, a first X-axis interferometer disposed on the stage that is configured to measure an X-axis location of the stage using the X-axis interference reflector, and an optical movable element spaced apart from the stage in the Y-axis direction that is configured to shift in the X-axis direction a path of a light beam propagating in the Y-axis direction according to movement of the stage in the X-axis direction.

Abstract translation: 舞台装置包括被配置为在X轴方向和Y轴方向上移动的台架，与X轴方向上与舞台间隔开的X轴干涉反射镜，设置在舞台上的第一X轴干涉仪 其被配置为使用X轴干涉反射器测量所述平台的X轴位置，以及与所述载物台沿Y轴方向隔开的光学可动元件，所述光学可动元件被构造成在X轴方向上移动路径 根据载物台在X轴方向的移动而沿Y轴方向传播的光束。

公开(公告)号：US12223249B2

公开(公告)日：2025-02-11

申请号：US17522185

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-Min Jung ,  Kyo Il Koo ,  Sang-Wook Park

IPC: G06F30/392 ,  G06F30/398 ,  G06F119/18

Abstract: Provided is a method of manufacturing a semiconductor device. the method comprises receiving layout data including a plurality of pieces of pattern data, the plurality of pieces of pattern data having through first to Nth unique patterns (N is a natural number greater than or equal to two), calculating first to Nth density values of the first to Nth unique patterns from the layout data and calculating first to Nth populations of the first to Nth unique patterns from the layout data, performing sampling by selecting some unique patterns among the first to Nth unique patterns, the selecting based on the first to Nth density values and the first to Nth populations, and performing etch modeling on sampled patterns of the plurality of pieces of pattern data, the sampled patterns corresponding to the selected unique patterns.

公开(公告)号：US10101968B2

公开(公告)日：2018-10-16

申请号：US15634276

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wook Park ,  Bohdan Karpinskyy ,  Yong Ki Lee ,  Yunhyeok Choi ,  Mijung Noh

IPC: G06F7/58

Abstract: A random number generator may include a first meta-stable inverter having an input terminal and an output terminal connected to each other and configured to generate a meta-stable voltage, an amplifier configured to amplify the meta-stable voltage, control circuitry configured to adjust a threshold voltage of the meta-stable voltage, and a sampler configured to generate a random number based on sampling the meta-stable voltage. The random number generator may be configured to be operated according to different modes of operation of a plurality of modes of operation. The amplifier may be a second meta-stable inverter configured to amplify the meta-stable voltage or include an input terminal and an output terminal that are connected to each other based on the random number generator being operated according to a first mode of operation or a second mode of operation, respectively, of the plurality of modes of operation.