公开(公告)号：US10037870B2

公开(公告)日：2018-07-31

申请号：US15260300

申请日：2016-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-ho Kang ,  Ki-chul Kim ,  Yong-hun Lee ,  Pyung Moon ,  Sun-young Lee ,  Un-ki Kim

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/324

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01L21/324

Abstract: A method of performing a surface treatment includes passivating a surface of an insulating part in a reaction chamber, and then performing a hydrogen plasma annealing treatment on a substrate in the reaction chamber. The passivation of the surface of the insulating part includes supplying a nitrogen-based gas into the reaction chamber and exciting the nitrogen-based gas in the reaction chamber using a plasma generator.