公开(公告)号：US20140144380A1

公开(公告)日：2014-05-29

申请号：US13687642

申请日：2012-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-ho Kang ,  Bong-jin Kuh ,  Ki-chul Kim ,  Jin-kwon Bok ,  Yong-kyu Joo ,  Sang-cheol Ha

IPC: C23C16/455

CPC classification number: C23C16/45572 ,  C23C16/45578 ,  Y10T137/6416

Abstract: A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit.

Abstract translation: 包括气体供给管的气体供给管和化学气相沉积（CVD）装置。 气体供给管包括：第一管，其经由供气管连接到气体存储装置，以将反应气体供应到反应炉中; 以及与所述第一管热接触以冷却所述第一管的第二管，其中所述第二管的第一端经由冷却介质管线连接到冷却介质供给单元，使得冷却介质在所述第二管内部循环， 第二管的相对端连接到冷却介质收集单元。

公开(公告)号：US10037870B2

公开(公告)日：2018-07-31

申请号：US15260300

申请日：2016-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-ho Kang ,  Ki-chul Kim ,  Yong-hun Lee ,  Pyung Moon ,  Sun-young Lee ,  Un-ki Kim

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/324

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01L21/324

Abstract: A method of performing a surface treatment includes passivating a surface of an insulating part in a reaction chamber, and then performing a hydrogen plasma annealing treatment on a substrate in the reaction chamber. The passivation of the surface of the insulating part includes supplying a nitrogen-based gas into the reaction chamber and exciting the nitrogen-based gas in the reaction chamber using a plasma generator.