公开(公告)号：US20240224510A1

公开(公告)日：2024-07-04

申请号：US18354041

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghee LEE ,  Jaekyeong JEONG ,  Seungwan SEO ,  Yongsuk TAK ,  Yurim KIM ,  Teawon KIM ,  Joohee JEONG

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/315 ,  H10B12/34

Abstract: A field-effect transistor includes an insulating barrier layer on a substrate, a gate electrode extending on the insulating barrier layer, a gate insulating layer covering opposite side surfaces and a top surface of the gate electrode, an oxide semiconductor layer on the gate insulating layer and including at least one metal element selected from indium (In) and zinc (Zn), and a source structure and a drain structure separated from each other, the source structure and the drain structure electrically connected to the oxide semiconductor layer. Each of the source structure and the drain structure includes an indium gallium tin oxide (IGTO) film on the oxide semiconductor layer, a conductive metal nitride film on the IGTO film, one of a source electrode and a drain electrode on the conductive metal nitride film, and a top capping layer on a top surface of one of the source electrode and the drain electrode.

公开(公告)号：US20230255017A1

公开(公告)日：2023-08-10

申请号：US18103596

申请日：2023-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Teawon KIM ,  Jiwon YUN ,  Yurim KIM ,  Junghan LEE ,  Yongsuk TAK

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/05 ,  H10B12/0335

Abstract: A semiconductor apparatus includes a bit line extending in a first horizontal direction on a substrate; a channel layer on the bit line, the channel layer extending in a vertical direction, including a first oxide semiconductor material that includes indium, and having a first side wall and a second side wall; a word line on the first side wall of the channel layer; a contact forming region on a top surface and an upper portion of the second side wall of the channel layer, the contact forming region including a second oxide semiconductor material that includes indium and having a resistivity lower than a resistivity of the channel layer; a contact layer on the contact forming region; and a capacitor structure on a top surface of the contact layer.