METHOD OF MANUFACTURING PHOTOMASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20230408912A1

    公开(公告)日:2023-12-21

    申请号:US18328395

    申请日:2023-06-02

    IPC分类号: G03F1/74 G03F1/24

    CPC分类号: G03F1/74 H01L21/0274 G03F1/24

    摘要: A method of manufacturing a photomask includes forming a photomask having a plurality of pattern elements, wherein the plurality of pattern elements include correction-target pattern elements having a critical dimension (CD) deviation; acquiring local CD correction information; directing a laser beam to a mirror array of a digital micromirror device (DMD), wherein the mirror array has mirrors arranged in a plurality of rows and a plurality of columns; converting the laser beam into a beam pattern array corresponding to the mirror array by controlling on/off switching of each of the mirrors based on the local CD correction information; forming a linear beam by focusing the beam pattern array through an optical system; applying an etchant to the photomask and directing the linear beam to the photomask and moving the linear beam to irradiate the photomask.

    CORRECTING APPARATUS OF EXTREME ULTRAVIOLET (EUV) PHOTOMASK AND CORRECTING METHOD OF EUV PHOTOMASK

    公开(公告)号:US20220283512A1

    公开(公告)日:2022-09-08

    申请号:US17508144

    申请日:2021-10-22

    IPC分类号: G03F7/20 G02B26/10

    摘要: A correcting apparatus of an extreme ultraviolet (EUV) photomask includes: a support portion configured to support an EUV photomask having a main area in which a plurality of pattern elements are arranged, a chemical supply unit configured to supply a chemical to the main area, a light source unit configured to generate a laser beam, and a control unit configured to irradiate the laser beam to the chemical supplied to the main area of the EUV photomask and to, based a laser dosage map for correcting critical dimensions (CDs) of the plurality of pattern elements in the main area, adjust a dosage of the laser beam based on the laser dosage map such that among the plurality of pattern elements, pattern elements having different critical dimensions are etched at different etching rates.