公开(公告)号：US20240292597A1

公开(公告)日：2024-08-29

申请号：US18528621

申请日：2023-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan HUH ,  Daehyun KIM ,  Yeajin NA ,  Junsik YU ,  Taekyung YOON ,  Yoojin JEONG ,  Yongjun CHOI

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/485 ,  H10B12/482

Abstract: Described is a semiconductor device comprising an active pattern, an additional active layer on the active pattern, and a gate structure that runs across the active pattern. The additional active layer includes a bottom surface connected to a sidewall of the active pattern and an upper curved surface at a level higher than a level of the bottom surface. A lattice contact of the additional active layer is different from that of the active pattern.

公开(公告)号：US20210074594A1

公开(公告)日：2021-03-11

申请号：US16847727

申请日：2020-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junbum PARK ,  Younghwan KIM ,  Jongsu KIM ,  Youngjoo LEE ,  Yoojin JEONG

IPC: H01L21/66 ,  G01B11/06 ,  H01J37/32 ,  G01N21/95

Abstract: A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.