公开(公告)号：US20180197791A1

公开(公告)日：2018-07-12

申请号：US15914125

申请日：2018-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin CHOI ,  Ah-Young CHEON ,  Kwang-Yong YANG ,  Myungil KANG ,  Dohyoung KIM ,  YoonHae KIM

IPC: H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L21/265 ,  H01L29/165

CPC classification number: H01L21/823814 ,  H01L21/26586 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545

Abstract: Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.