公开(公告)号：US20210222300A1

公开(公告)日：2021-07-22

申请号：US17149206

申请日：2021-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woongsik KIM ,  Nongmoon HWANG ,  Yoonjung LEE

IPC: C23C16/503 ,  C23C16/24

Abstract: A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.