公开(公告)号：US20240011146A1

公开(公告)日：2024-01-11

申请号：US18328818

申请日：2023-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjun LEE ,  Nongmoon HWANG

IPC: C23C14/30 ,  H01J37/317 ,  C23C14/08 ,  C23C14/06 ,  C23C14/58

CPC classification number: C23C14/30 ,  H01J37/3178 ,  C23C14/083 ,  C23C14/0694 ,  C23C14/5806 ,  H01J2237/20214

Abstract: Provided herein are methods of forming a coating film that include providing a coating source including an orthorhombic vernier phase rare-earth element oxyfluoride and a part in a vacuum chamber, and performing a physical vapor deposition (PVD) process to form the coating film the part, wherein the coating film includes the orthorhombic vernier phase rare-earth element oxyfluoride. Apparatus including parts having coating films comprising an orthorhombic vernier phase rare-earth element oxyfluoride are also provided.

公开(公告)号：US20210222300A1

公开(公告)日：2021-07-22

申请号：US17149206

申请日：2021-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woongsik KIM ,  Nongmoon HWANG ,  Yoonjung LEE

IPC: C23C16/503 ,  C23C16/24

Abstract: A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.