公开(公告)号：US20170309491A1

公开(公告)日：2017-10-26

申请号：US15369202

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ku AHN ,  Ji-hoon KIM ,  Seong-hun PARK ,  Youn-jae CHO ,  Hee-sook PARK ,  Woong-hee SOHN

IPC: H01L21/285 ,  C23C16/06 ,  H01L27/108

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/14 ,  C23C16/45527 ,  H01L21/28568 ,  H01L21/76877 ,  H01L27/10891

Abstract: A method of forming a tungsten film including disposing a substrate inside a process chamber; performing a tungsten nucleation layer forming operation for forming a tungsten nucleation layer on the substrate, performing a first operation for forming a portion of a tungsten bulk layer on the tungsten nucleation layer by alternately supplying a tungsten-containing gas and a reducing gas into the process chamber, and performing a second operation for stopping the supply of the tungsten-containing gas and the reducing gas and removing a remaining gas in the process chamber may be provided. The first operation and the second operation may be repeated at least twice until the tungsten bulk layer reaches a desired thickness.