公开(公告)号：US20200174133A1

公开(公告)日：2020-06-04

申请号：US16427576

申请日：2019-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Young Chan Kim ,  Tae sub Jung ,  Young Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

IPC: G01S17/89 ,  H01L27/146 ,  G01S17/08

Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.