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    Image sensors and distance measuring devices using the same
    1.
    发明授权
    Image sensors and distance measuring devices using the same 有权

    公开(公告)号：US11525922B2

    公开(公告)日：2022-12-13

    申请号：US16427576

    申请日：2019-05-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu Jin ,  Young Chan Kim ,  Tae Sub Jung ,  Yong Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

    IPC: H01L27/146 ,  G01S17/89 ,  G01S17/08

    Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

    Image sensor and imaging device
    2.
    发明授权
    Image sensor and imaging device 有权

    公开(公告)号：US11456327B2

    公开(公告)日：2022-09-27

    申请号：US16524806

    申请日：2019-07-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu Jin ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

    IPC: H01L27/146 ,  H01L31/167

    Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

    IMAGE SENSOR AND IMAGING DEVICE
    4.
    发明申请
    IMAGE SENSOR AND IMAGING DEVICE 审中-公开

    公开(公告)号：US20200286942A1

    公开(公告)日：2020-09-10

    申请号：US16524806

    申请日：2019-07-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu JIN ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

    IPC: H01L27/146 ,  H01L31/167

    Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

    3D image sensor
    6.
    发明授权
    3D image sensor 有权

    公开(公告)号：US10991748B2

    公开(公告)日：2021-04-27

    申请号：US16124226

    申请日：2018-09-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min-Sun Keel ,  Doo Won Kwon ,  Hyun Surk Ryu ,  Young Chan Kim ,  Young Gu Jin

    IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204 ,  G06T7/521 ,  H04N5/378

    Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

    IMAGE SENSORS AND DISTANCE MEASURING DEVICES USING THE SAME
    7.
    发明申请
    IMAGE SENSORS AND DISTANCE MEASURING DEVICES USING THE SAME 审中-公开

    公开(公告)号：US20200174133A1

    公开(公告)日：2020-06-04

    申请号：US16427576

    申请日：2019-05-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu JIN ,  Young Chan Kim ,  Tae sub Jung ,  Young Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

    IPC: G01S17/89 ,  H01L27/146 ,  G01S17/08

    Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

    Image sensor
    10.
    发明授权
    Image sensor 有权

    公开(公告)号：US10950640B2

    公开(公告)日：2021-03-16

    申请号：US16551114

    申请日：2019-08-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Gu Jin ,  Yong Hun Kwon ,  Young Chan Kim ,  Sae Young Kim ,  Sung Young Seo ,  Moo Sup Lim ,  Tae Sub Jung ,  Sung Ho Choi

    IPC: H01L27/146

    Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

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