公开(公告)号：US20240128290A1

公开(公告)日：2024-04-18

申请号：US18480479

申请日：2023-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hyun LEE ,  Young Chan KIM ,  Young Gu JIN ,  Young Sun OH

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/14614 ,  G01S7/4816 ,  H01L27/14627 ,  H01L27/14645

Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.

公开(公告)号：US20180013961A1

公开(公告)日：2018-01-11

申请号：US15435397

申请日：2017-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Hee Lee ,  Young Gu JIN ,  Yong Wan JIN

IPC: H04N5/33 ,  H01L27/30 ,  H01L27/28 ,  H04N5/359 ,  H04N5/378 ,  H04N5/374

CPC classification number: H04N5/332 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L27/286 ,  H01L27/307 ,  H04N5/359 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

Abstract: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

公开(公告)号：US20140103191A1

公开(公告)日：2014-04-17

申请号：US14030180

申请日：2013-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Hwan JUNG ,  Dong Ki MIN ,  Young Gu JIN ,  Seok Yong HONG

IPC: H04N5/378

CPC classification number: H04N5/378 ,  H04N5/361 ,  H04N5/374 ,  H04N5/3742

Abstract: A sensing method for an image sensor includes: connecting a first column line with a second column line in response to switch signals; and sensing a first pixel signal generated based on a first signal output from a first pixel and a second signal output from a second pixel, the first pixel and the second pixel being connected to the first column line and the second pixel being connected to the second column line.

Abstract translation: 一种用于图像传感器的感测方法包括：响应于开关信号将第一列线与第二列线连接; 并且感测基于从第一像素输出的第一信号和从第二像素输出的第二信号产生的第一像素信号，所述第一像素和所述第二像素连接到所述第一列线，并且所述第二像素连接到所述第二像素 列线。

公开(公告)号：US20230328408A1

公开(公告)日：2023-10-12

申请号：US18098237

申请日：2023-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu JIN ,  Young Sun OH

IPC: H04N25/79 ,  H04N25/11 ,  H04N25/702 ,  H04N25/77 ,  H01L27/146

CPC classification number: H04N25/79 ,  H04N25/11 ,  H04N25/702 ,  H04N25/77 ,  H01L27/14621 ,  H01L27/14645

Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.

公开(公告)号：US20190189672A1

公开(公告)日：2019-06-20

申请号：US16284361

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Doo Won KWON

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14652 ,  H04N5/332 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

公开(公告)号：US20230143634A1

公开(公告)日：2023-05-11

申请号：US17857082

申请日：2022-07-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Jung Chak AHN ,  Won Seok LEE

IPC: H01L27/146

CPC classification number: H01L27/14612

Abstract: Disclosed is a semiconductor device including a substrate, a gate structure on the substrate, and including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction, and a third side extended in parallel with the second direction, and a plurality of source/drain areas including first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction, the first and second source/drain areas overlap the first and second sides, respectively, the third source/drain area overlaps one of the first side or the third side, and a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.

公开(公告)号：US20200286942A1

公开(公告)日：2020-09-10

申请号：US16524806

申请日：2019-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

IPC: H01L27/146 ,  H01L31/167

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

公开(公告)号：US20190189671A1

公开(公告)日：2019-06-20

申请号：US16284319

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Doo Won KWON

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

公开(公告)号：US20150116565A1

公开(公告)日：2015-04-30

申请号：US14496445

申请日：2014-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung Hyun KIM ,  Mun Hwan KIM ,  Chan Hyung KIM ,  Jung Bin YUN ,  Young Gu JIN ,  Seung Won CHA

IPC: H04N5/374

CPC classification number: H04N5/37457 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H04N9/045

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract translation: 根据示例实施例的图像传感器包括第一行中的第一像素和第二像素。 第一像素包括在半导体衬底中的第一深度处的第一光电转换元件，并且第一光电转换元件被配置为将第一可见光光谱转换为第一光电荷，并且第二像素包括第二光电转换元件 所述第二光电转换元件与所述第一光电转换元件在垂直方向上至少部分地重叠，并且所述第二光电转换元件被配置为将第二可见光光谱转换为第二光可变光谱， 照片费。

公开(公告)号：US20240178252A1

公开(公告)日：2024-05-30

申请号：US18332270

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seo Joo KIM ,  Sung Hyuck CHO ,  Young Chan KIM ,  Seung Hyun LEE ,  Young Gu JIN

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14603 ,  H01L27/14621

Abstract: In one embodiment, an image sensor includes unit pixels, each of the unit pixel including a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area on the first sub-pixel of each unit pixel and a second sub-lens area on the second sub-pixel of each unit pixel. The first sub-lens area may include a first micro lens, and the second sub-lens area includes a second micro lens. In addition, the first micro lens may include a depression defined in a central area thereof.