公开(公告)号：US20230301199A1

公开(公告)日：2023-09-21

申请号：US17829636

申请日：2022-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Keun KIM ,  Taehyun KIM

IPC: H01L43/02 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/10

Abstract: Disclosed are a magnetic tunnel junction structure and a magnetic memory device including the same. The magnetic tunnel junction structure may include a first spacer layer, a first magnetic layer on the first spacer layer, and a second spacer layer on the first magnetic layer. The first spacer layer and the second spacer layer may include a same material, and a thickness of the first spacer layer may range from 1 nm to 3.5 nm.