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公开(公告)号:US20250089394A1
公开(公告)日:2025-03-13
申请号:US18627797
申请日:2024-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young Woo CHUNG , Soo Eon KIM , Yo Seph KIM , Chan Hyeon SEONG
IPC: H01L27/146
Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate including first and second surfaces opposed to each other, a first pixel group in the substrate including a first to forth unit pixels adjacent to one another in a plan view, a photoelectric conversion area in the first to fourth unit pixels, a first isolation trench in the substrate surrounding the first pixel group, a second isolation trench in the substrate between the first unit pixel and the fourth unit pixel and between the second unit pixel and the third unit pixel, the second isolation trench in contact with the second surface of the substrate, and a first color filter on the second surface of the substrate covering the first pixel group.
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公开(公告)号:US20250098345A1
公开(公告)日:2025-03-20
申请号:US18642333
申请日:2024-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young Woo CHUNG , Do Hoon KIM , Sung-Jun KIM , Han Seok KIM , Jin Hyung ROH
IPC: H01L27/146
Abstract: An image sensor includes a substrate; a plurality of unit pixel regions in the substrate, each unit pixel region o including a floating diffusion region and a transfer gate electrode; and a microlens on the substrate. The transfer gate electrode includes a first connection part on a first surface of the substrate and a first extending part connected to the first connection part and extending from the first surface into the substrate. A third surface of the first extending part has a first angle with respect to the first surface of the substrate and a fourth surface of the first extending part has a second angle with respect to the first surface of the substrate. The fourth surface, the third surface, and the floating diffusion region are sequentially disposed in a direction parallel to the first surface of the substrate, and the first angle is greater than the second angle.
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公开(公告)号:US20220109016A1
公开(公告)日:2022-04-07
申请号:US17405517
申请日:2021-08-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Han Seok KIM , Byung Jun PARK , Hyeon Ho KIM , Young Woo CHUNG
IPC: H01L27/146
Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.
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