公开(公告)号：US10971518B2

公开(公告)日：2021-04-06

申请号：US16411638

申请日：2019-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jibong Park ,  Soyeon Kim ,  Hanyoung Lee ,  Young-Bae Yoon ,  Dongseog Eun

IPC: H01L27/11 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524

Abstract: A three-dimensional semiconductor memory device includes a substrate, an electrode structure including electrodes vertically stacked on the substrate and each having a pad portion, electrode separation structures penetrating the electrode structure and apart from each other in a second direction, and contact plugs coupled to the pad portions. The contact plugs comprise first contact plugs and second contact plugs apart in the second direction from the first contact plugs. The electrode separation structures comprise a first electrode separation between the first and second contact plugs. The first contact plugs are apart in the second direction at a first distance from the first electrode separation structure. The second contact plugs are apart in the second direction from the first electrode separation structure at a second distance, different from the first distance.

公开(公告)号：US10854622B2

公开(公告)日：2020-12-01

申请号：US16886021

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Bae Yoon ,  Joong-Shik Shin ,  Kwang-Ho Kim ,  Hyun-Mog Park

IPC: H01L27/11565 ,  H01L27/11582 ,  H01L27/11578 ,  H01L27/11568 ,  H01L27/11575

Abstract: A vertical memory device includes a channel, gate lines, and a cutting pattern, respectively, on a substrate. The channel extends in a first direction substantially perpendicular to an upper surface of the substrate. The gate lines are spaced apart from each other in the first direction. Each of the gate lines surrounds the channel and extends in a second direction substantially parallel to the upper surface of the substrate. The cutting pattern includes a first cutting portion extending in the first direction and cutting the gate lines, and a second cutting portion crossing the first cutting portion and merged with the first cutting portion.