公开(公告)号：US20180040368A1

公开(公告)日：2018-02-08

申请号：US15783040

申请日：2017-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seop SHIM ,  Jae-Hong KIM ,  Jin-Man HAN

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/34

CPC classification number: G11C11/5635 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3445 ,  G11C16/3459 ,  G11C2211/5621

Abstract: Methods of operating non-volatile memory devices are provided including receiving program data and a program address. Memory cells that correspond to the program address are selected from among memory cells in an erased state. The selected memory cells are programmed based on the program data such that each of the selected memory cells is programmed to one of a plurality of programmed states, where threshold voltage distributions of the programmed states are different from each other and are higher than a threshold voltage distribution associated with the erased state. By programming all or a portion of the memory cells corresponding to the erased state to have positive threshold voltages, degradation of the data retention capability of the memory cells may be reduced.

公开(公告)号：US20220179724A1

公开(公告)日：2022-06-09

申请号：US17376441

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Seop SHIM ,  Kyung Duk LEE ,  Jong-Sung NA ,  Chan Moo PARK ,  In Kap CHANG ,  Chang Min CHO

IPC: G06F11/00 ,  G06F17/18 ,  G06N20/00

Abstract: A method for operating a storage device capable of improving reliability of a memory system is provided. The method includes providing a storage device which includes a first component and a second component; receiving, via a host interface of the storage device, a command for requesting failure possibility information about the storage device from an external device; and providing, via the host interface, the failure possibility information about the storage device to the external device in response to the command.