公开(公告)号：US20180025947A1

公开(公告)日：2018-01-25

申请号：US15460273

申请日：2017-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-don Hwang ,  Young-wook Park ,  Min-woo Kim ,  Yoo-jin Jeong

IPC: H01L21/8234 ,  H01L21/308

CPC classification number: H01L21/823481 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823475

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate with a pattern structure, the pattern structure including a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween. At least one support structure that contacts an upper surface of the pattern structure and extends on the pattern structure in a second direction that crosses the first direction is formed. A buried layer that fills the spaces between the plurality of first patterns while the at least one support structure contacts the upper surface of the pattern structure is formed. The at least one support structure is separated from the pattern structure.

公开(公告)号：US10115640B2

公开(公告)日：2018-10-30

申请号：US15460273

申请日：2017-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-don Hwang ,  Young-wook Park ,  Min-woo Kim ,  Yoo-jin Jeong

IPC: H01L21/76 ,  H01L21/8234 ,  H01L21/308

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate with a pattern structure, the pattern structure including a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween. At least one support structure that contacts an upper surface of the pattern structure and extends on the pattern structure in a second direction that crosses the first direction is formed. A buried layer that fills the spaces between the plurality of first patterns while the at least one support structure contacts the upper surface of the pattern structure is formed. The at least one support structure is separated from the pattern structure.