公开(公告)号：US20220328615A1

公开(公告)日：2022-10-13

申请号：US17851836

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20220328616A1

公开(公告)日：2022-10-13

申请号：US17853290

申请日：2022-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20220013623A1

公开(公告)日：2022-01-13

申请号：US17096239

申请日：2020-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20210183992A1

公开(公告)日：2021-06-17

申请号：US16916263

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin PARK ,  Haeryong KIM ,  Younsoo KIM ,  Younggeun PARK

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor structure and a semiconductor device, the capacitor structure including a lower electrode on a substrate; a seed layer on the lower electrode; a dielectric layer on the seed layer; and an upper electrode on the dielectric layer, wherein the dielectric layer includes a ternary metal oxide having a chemical formula of ABO3, in which each of A and B is independently a metal, and the seed layer includes a ternary metal oxide containing the same elements as that of the dielectric layer, the ternary metal oxide having a chemical formula of ABO3-x, in which each of A and B is the same metal as A and B of the ternary metal oxide having a chemical formula of ABO3, 0

公开(公告)号：US20230420487A1

公开(公告)日：2023-12-28

申请号：US18462909

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Younggeun PARK ,  Jooho LEE

IPC: H01G4/018 ,  H01L23/66

CPC classification number: H01L28/56 ,  H01L23/66 ,  H01L28/75 ,  H01L2223/6661

Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.

公开(公告)号：US20220173209A1

公开(公告)日：2022-06-02

申请号：US17465223

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Yong-Hee CHO ,  Seungwoo JANG ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L29/792

Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

公开(公告)号：US20220140066A1

公开(公告)日：2022-05-05

申请号：US17307592

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02

Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.

公开(公告)号：US20210328004A1

公开(公告)日：2021-10-21

申请号：US17098915

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L23/66

Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.