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公开(公告)号：US20240234193A9
公开(公告)日：2024-07-11
申请号：US18242388
申请日：2023-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngho Hwang , Sanghyun Lim , Jaehong Lim
IPC: H01L21/683 , H01L21/67 , H01L21/687
CPC classification number: H01L21/6838 , H01L21/67109 , H01L21/67248 , H01L21/6875
Abstract: Provided is a wafer processing apparatus including a plate having a plurality of support pins configured such that a wafer is mounted on the plurality of support pins and a plurality of vacuum ports positioned between the plurality of support pins, a heater configured to heat the plate, a flow regulator configured to provide a vacuum pressure for fixing the wafer to the plurality of vacuum ports, and configured to adjust a flow rate of a fluid flowing into the plurality of vacuum ports to be a target flow rate, and a chuck controller configured to control the target flow of the fluid set in the flow regulator, wherein the chuck controller is configured to generate a flow control signal for reducing the target flow rate of the fluid and send the flow control signal to the flow regulator during a heating process of the wafer.
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公开(公告)号：US20250155814A1
公开(公告)日：2025-05-15
申请号：US18751464
申请日：2024-06-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chulmin Cho , Youngho Hwang , Juno Park , Kyoungwhan Oh , Sunyoung Yun , Youngkyun Im , Jaehong Lim , Seok Heo
Abstract: A spin coating apparatus according to an embodiment includes a substrate supporter supporting a substrate, a substrate supporter driver rotating the substrate supporter, a laser supply unit disposed on the substrate supporter and providing a laser, and a laser driver of driving the laser supply unit, wherein the laser supply unit may move along a first direction, which is horizontal to the substrate surface on the substrate supporter.
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公开(公告)号：US20240136216A1
公开(公告)日：2024-04-25
申请号：US18242388
申请日：2023-09-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngho Hwang , Sanghyun Lim , Jaehong Lim
IPC: H01L21/683 , H01L21/67 , H01L21/687
CPC classification number: H01L21/6838 , H01L21/67109 , H01L21/67248 , H01L21/6875
Abstract: Provided is a wafer processing apparatus including a plate having a plurality of support pins configured such that a wafer is mounted on the plurality of support pins and a plurality of vacuum ports positioned between the plurality of support pins, a heater configured to heat the plate, a flow regulator configured to provide a vacuum pressure for fixing the wafer to the plurality of vacuum ports, and configured to adjust a flow rate of a fluid flowing into the plurality of vacuum ports to be a target flow rate, and a chuck controller configured to control the target flow of the fluid set in the flow regulator, wherein the chuck controller is configured to generate a flow control signal for reducing the target flow rate of the fluid and send the flow control signal to the flow regulator during a heating process of the wafer.
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公开(公告)号：US11456195B2
公开(公告)日：2022-09-27
申请号：US16751882
申请日：2020-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngho Hwang , Sungyong Park , Eunseok Seo , Hyeongseok Jo , Seok Heo
Abstract: A wafer processing apparatus is provided. The apparatus includes: a heating plate through which vacuum ports are formed; a plurality of temperature sensors; a heating device configured to heat the heating plate; first and second power supplies; temperature controllers to generate first and second feedback temperature control signals for controlling power output power supplies based on measurement values generated by the temperature sensors; an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer to the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator, and generate a feedback pressure control signal for controlling the electronic pressure regulator based on the first and second feedback temperature control signals.
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