公开(公告)号：US20240078018A1

公开(公告)日：2024-03-07

申请号：US18127133

申请日：2023-03-28

申请人： Samsung Electronics Co., Ltd.

发明人： Jinyoung Lee ,  Woohyun Kang ,  Youngjoo Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim ,  Jin Gu Jeong

IPC分类号： G06F3/06

CPC分类号： G06F3/0614 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

摘要： Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing a first request indicating a word line sequential read operation of a target memory block of the non-volatile memory device, providing first word line read data corresponding to memory cells of a first word line of the target memory block based on the first request, providing second word line read data corresponding to memory cells of a second word line of the target memory block based on the first request, the second word line being adjacent to the first word line, calculating a first word line gap value based on the first word line read data and the second word line read data, and performing a first reliability operation of the target memory block based on the first word line gap value.