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    STORAGE DEVICES CALCULATING A WORDLINE GAP VALUE, AND METHODS OF OPERATING THE SAME
    4.
    发明公开
    STORAGE DEVICES CALCULATING A WORDLINE GAP VALUE, AND METHODS OF OPERATING THE SAME 审中-公开

    公开(公告)号：US20240078018A1

    公开(公告)日：2024-03-07

    申请号：US18127133

    申请日：2023-03-28

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jinyoung Lee ,  Woohyun Kang ,  Youngjoo Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim ,  Jin Gu Jeong

    IPC分类号： G06F3/06

    CPC分类号： G06F3/0614 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

    摘要： Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing a first request indicating a word line sequential read operation of a target memory block of the non-volatile memory device, providing first word line read data corresponding to memory cells of a first word line of the target memory block based on the first request, providing second word line read data corresponding to memory cells of a second word line of the target memory block based on the first request, the second word line being adjacent to the first word line, calculating a first word line gap value based on the first word line read data and the second word line read data, and performing a first reliability operation of the target memory block based on the first word line gap value.

    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    5.
    发明申请
    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220214826A1

    公开(公告)日：2022-07-07

    申请号：US17376437

    申请日：2021-07-15

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin ,  Woohyun Kang ,  Shinho Oh

    IPC分类号： G06F3/06 ,  G06N3/08

    摘要： A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.

    NONVOLATILE MEMORY DEVICE AND OPEATION METHOD THEREOF
    6.
    发明公开
    NONVOLATILE MEMORY DEVICE AND OPEATION METHOD THEREOF 审中-公开

    公开(公告)号：US20240177764A1

    公开(公告)日：2024-05-30

    申请号：US18223783

    申请日：2023-07-19

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Su Chang Jeon ,  Woohyun Kang ,  Seungkyung Ro ,  Sangkwon Moon ,  Heewon Lee

    IPC分类号： G11C11/408 ,  G06F3/06

    CPC分类号： G11C11/4085 ,  G06F3/0614 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0679 ,  G11C11/4087

    摘要： Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.