公开(公告)号：US20240161824A1

公开(公告)日：2024-05-16

申请号：US18503719

申请日：2023-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungmin LEE ,  Youngkeol KIM ,  Daeshik KIM

IPC: G11C13/00

CPC classification number: G11C13/0064 ,  G11C13/004 ,  G11C13/0069

Abstract: A memory device including a memory cell including a variable resistance element, a controller configured to generate a control signal based on whether the memory device performs a read operation or a verify read operation, a reference cell including a reference resistance circuit configured to have different resistance values depending on the control signal, and a sense amplifier configured to sense a difference between a read voltage value applied from the memory cell and a reference voltage value applied from the reference resistance circuit may be provided.