公开(公告)号：US20210262081A1

公开(公告)日：2021-08-26

申请号：US16920913

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsung Lee ,  Youngkwan Cha ,  Yountaek Ryu ,  Kyungwoo Park ,  Woonyoung Choi ,  Ducksu Kim ,  Jeongyub Lee ,  Changseung Lee

IPC: C23C14/54 ,  C23C14/04 ,  C23C14/34

Abstract: A deposition apparatus forms a material layer on a substrate in a deposition chamber. Provided in the deposition chamber are at least one deposition material providing device that provides a deposition material to the substrate, a deposition mask that defines a deposition area on the substrate, and a stage that supports the substrate. The stage is movable in X and Y directions in a plane parallel to the substrate.

公开(公告)号：US12113129B2

公开(公告)日：2024-10-08

申请号：US17716460

申请日：2022-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaechul Park ,  Youngkwan Cha

IPC: H01L51/30 ,  H01L29/51 ,  H01L29/78 ,  H10B51/30

CPC classification number: H01L29/78391 ,  H01L29/516 ,  H10B51/30

Abstract: A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.