公开(公告)号：US08809993B2

公开(公告)日：2014-08-19

申请号：US13772775

申请日：2013-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sei-lyn Kwak ,  Se-myeong Jang ,  Min-sung Kang ,  Yun-jae Lee ,  Hyeon-kyu Lee

IPC: H01L29/00

CPC classification number: H01L29/0649 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1052 ,  H01L27/10879 ,  H01L27/10891

Abstract: A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions.

Abstract translation: 半导体器件可以包括限定多个有源区域的隔离区域。 多个有源区域可以包括在第一方向上具有短轴和在第二方向上具有长轴的上表面。 可以沿着第一方向和第二方向重复地设置多个有源区域，并且可以彼此间隔开。 隔离区域可以包括与短轴对有源区域的侧壁接触的第一绝缘层，其可以是多个有源区域中的第一方向上的最近的有源区域，并且沿着第一最短距离 短轴对的活动区域。

公开(公告)号：US20130241027A1

公开(公告)日：2013-09-19

申请号：US13772775

申请日：2013-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sei-lyn Kwak ,  Se-myeong Jang ,  Min-sung Kang ,  Yun-jae Lee ,  Hyeon-kyu Lee

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1052 ,  H01L27/10879 ,  H01L27/10891

Abstract: A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions.

Abstract translation: 半导体器件可以包括限定多个有源区域的隔离区域。 多个有源区域可以包括在第一方向上具有短轴和在第二方向上具有长轴的上表面。 可以沿着第一方向和第二方向重复地设置多个有源区域，并且可以彼此间隔开。 隔离区域可以包括与短轴对有源区域的侧壁接触的第一绝缘层，其可以是多个有源区域中的第一方向上的最接近的有源区域，并且沿着第一最短距离 短轴对的活动区域。