公开(公告)号：US09536884B2

公开(公告)日：2017-01-03

申请号：US14450854

申请日：2014-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Soo Kim ,  Dong-Soo Woo ,  Se-myeong Jang

IPC: H01L27/115 ,  H01L27/108

CPC classification number: H01L27/10891 ,  H01L27/10876

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract translation: 半导体器件可以包括：衬底，其包括在第一方向上具有长轴和在第二方向上具有短轴的多个有源区，所述多个有源区沿着所述第一和第二方向重复且分开地定位;隔离膜 限定多个有源区域，跨越多个有源区域和隔离膜延伸的多个字线，以及分别覆盖多个字线的至少一部分的正固定电荷含有层。

公开(公告)号：US08987907B2

公开(公告)日：2015-03-24

申请号：US13777191

申请日：2013-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-sung Kang ,  Se-myeong Jang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/522

CPC classification number: H01L23/52 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device may include a semiconductor layer including at least one unit device, a first interconnection on the semiconductor layer and electrically connected to the at least one unit device, a diffusion barrier layer on the first interconnection, an intermetallic dielectric layer on the diffusion barrier layer, a plug in a first region of the intermetallic dielectric layer and passing through the diffusion barrier layer so that a bottom surface thereof contacts the first interconnection, and a first dummy plug in a second region of the intermetallic dielectric layer, passing through the diffusion barrier layer, and disposed apart from the first interconnection so that a bottom surface of the first dummy plug does not contact the first interconnection.

Abstract translation: 半导体器件可以包括半导体层，其包括至少一个单元器件，半导体层上的第一互连并且电连接到至少一个单元器件，第一互连上的扩散阻挡层，扩散阻挡层上的金属间介电层 在所述金属间介电层的第一区域中插入并穿过所述扩散阻挡层使得其底表面接触所述第一互连，以及穿过所述扩散层的所述金属间介电层的第二区域中的第一虚拟插塞 阻挡层，并且设置成与第一互连分开，使得第一虚拟插头的底表面不接触第一互连。

公开(公告)号：US20150194438A1

公开(公告)日：2015-07-09

申请号：US14450854

申请日：2014-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Soo Kim ,  Dong-Soo Woo ,  Se-myeong Jang

IPC: H01L27/115

CPC classification number: H01L27/10891 ,  H01L27/10876

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract translation: 半导体器件可以包括：衬底，其包括在第一方向上具有长轴和在第二方向上具有短轴的多个有源区，所述多个有源区沿着所述第一和第二方向重复且分开地定位;隔离膜 限定多个有源区域，跨越多个有源区域和隔离膜延伸的多个字线，以及分别覆盖多个字线的至少一部分的正固定电荷含有层。

公开(公告)号：US08928073B2

公开(公告)日：2015-01-06

申请号：US13787147

申请日：2013-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-myeong Jang ,  Sang-hyun Han ,  Hyo-dong Ban

IPC: H01L29/66 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/823456 ,  H01L21/823481

Abstract: A semiconductor device includes a substrate partitioned into a cell region, a peripheral circuit region, and an interface region between the cell region and the peripheral circuit region. A guard ring is provided in the interface region of the substrate and surrounds the cell region. A first gate structure is in the cell region, and a second gate structure is in the peripheral circuit region.

Abstract translation: 半导体器件包括分隔成单元区域的基板，外围电路区域和单元区域与外围电路区域之间的接口区域。 保护环设置在基板的界面区域中并围绕单元区域。 第一栅极结构在单元区域中，第二栅极结构在外围电路区域中。

公开(公告)号：US08809993B2

公开(公告)日：2014-08-19

申请号：US13772775

申请日：2013-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sei-lyn Kwak ,  Se-myeong Jang ,  Min-sung Kang ,  Yun-jae Lee ,  Hyeon-kyu Lee

IPC: H01L29/00

CPC classification number: H01L29/0649 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1052 ,  H01L27/10879 ,  H01L27/10891

Abstract: A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions.

Abstract translation: 半导体器件可以包括限定多个有源区域的隔离区域。 多个有源区域可以包括在第一方向上具有短轴和在第二方向上具有长轴的上表面。 可以沿着第一方向和第二方向重复地设置多个有源区域，并且可以彼此间隔开。 隔离区域可以包括与短轴对有源区域的侧壁接触的第一绝缘层，其可以是多个有源区域中的第一方向上的最近的有源区域，并且沿着第一最短距离 短轴对的活动区域。

公开(公告)号：US20130241027A1

公开(公告)日：2013-09-19

申请号：US13772775

申请日：2013-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sei-lyn Kwak ,  Se-myeong Jang ,  Min-sung Kang ,  Yun-jae Lee ,  Hyeon-kyu Lee

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1052 ,  H01L27/10879 ,  H01L27/10891

Abstract: A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions.

Abstract translation: 半导体器件可以包括限定多个有源区域的隔离区域。 多个有源区域可以包括在第一方向上具有短轴和在第二方向上具有长轴的上表面。 可以沿着第一方向和第二方向重复地设置多个有源区域，并且可以彼此间隔开。 隔离区域可以包括与短轴对有源区域的侧壁接触的第一绝缘层，其可以是多个有源区域中的第一方向上的最接近的有源区域，并且沿着第一最短距离 短轴对的活动区域。

公开(公告)号：US20130248997A1

公开(公告)日：2013-09-26

申请号：US13787147

申请日：2013-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-myeong Jang ,  Sang-hyun Han ,  Hyo-dong Ban

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/823456 ,  H01L21/823481

Abstract: A semiconductor device includes a substrate partitioned into a cell region, a peripheral circuit region, and an interface region between the cell region and the peripheral circuit region. A guard ring is provided in the interface region of the substrate and surrounds the cell region. A first gate structure is in the cell region, and a second gate structure is in the peripheral circuit region.

Abstract translation: 半导体器件包括分隔成单元区域的基板，外围电路区域和单元区域与外围电路区域之间的接口区域。 保护环设置在基板的界面区域中并围绕单元区域。 第一栅极结构在单元区域中，第二栅极结构在外围电路区域中。