公开(公告)号：US10957579B2

公开(公告)日：2021-03-23

申请号：US16530075

申请日：2019-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yung Bae Kim ,  Harsono Simka ,  Jong Hyun Lee

IPC: H01L21/768

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods of forming an integrated circuit device may include forming a first insulating layer and a first conductive layer on a substrate and selectively forming a second insulating layer on the first insulating layer. The first insulating layer may include a recess, and the first conductive layer may be in the recess of the first insulating layer. The second insulating layer may include a first opening exposing a surface of the first conductive layer. The methods may also include forming a third insulating layer on the second insulating layer and the first conductive layer, forming a second opening extending through the third insulating layer and exposing the first conductive layer, and forming a second conductive layer in the second opening.