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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09018618B1

    公开(公告)日：2015-04-28

    申请号：US14526274

    申请日：2014-10-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Hyun Lee ,  Ki Ho Park ,  Suk Ho Yoon ,  Sang Heon Han ,  Jae Sung Hyun

    IPC: H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/0224 ,  H01S5/042 ,  H01S5/3408 ,  H01S5/34333 ,  H01L2924/00014

    Abstract: There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.

    Abstract translation: 提供一种半导体发光器件，包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的有源层，并且包括多个交替层叠的量子势垒层和量子阱层，其中所述多个量子阱层的至少一部分具有不同的厚度 其中与p型半导体层最相邻的第一量子阱层的厚度小于与其相邻的第二量子阱层的厚度，并且大于第三量子阱层的厚度，除了第一和第二 量子阱层。

    Chemical vapor deposition apparatus
    4.
    发明授权
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号：US09410247B2

    公开(公告)日：2016-08-09

    申请号：US13655696

    申请日：2012-10-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Hyun Lee ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim

    IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02

    CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

    Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

    Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

    Nitride semiconductor light emitting device
    5.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US08748866B2

    公开(公告)日：2014-06-10

    申请号：US13733586

    申请日：2013-01-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Hyun Lee ,  Sang Heon Han ,  Jin Young Lim ,  Young Sun Kim

    IPC: H01L29/06 ,  H01L31/00

    CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

    Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

    Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。

    Layout method
    6.
    发明授权
    Layout method 有权

    公开(公告)号：US11094693B2

    公开(公告)日：2021-08-17

    申请号：US16255519

    申请日：2019-01-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： In Wook Oh ,  Jae Seok Yang ,  Jong Hyun Lee ,  Hyun Jae Lee ,  Sung Wook Hwang

    IPC: H01L27/088 ,  G06F30/39 ,  G06F30/392 ,  H01L23/528 ,  H01L27/02

    Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.

    Integrated circuit devices including a via and methods of forming the same
    7.
    发明授权
    Integrated circuit devices including a via and methods of forming the same 有权

    公开(公告)号：US10957579B2

    公开(公告)日：2021-03-23

    申请号：US16530075

    申请日：2019-08-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yung Bae Kim ,  Harsono Simka ,  Jong Hyun Lee

    IPC: H01L21/768

    Abstract: Integrated circuit devices and methods of forming the same are provided. The methods of forming an integrated circuit device may include forming a first insulating layer and a first conductive layer on a substrate and selectively forming a second insulating layer on the first insulating layer. The first insulating layer may include a recess, and the first conductive layer may be in the recess of the first insulating layer. The second insulating layer may include a first opening exposing a surface of the first conductive layer. The methods may also include forming a third insulating layer on the second insulating layer and the first conductive layer, forming a second opening extending through the third insulating layer and exposing the first conductive layer, and forming a second conductive layer in the second opening.

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