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1.发明授权公开(公告)号：US11380537B2
公开(公告)日：2022-07-05
申请号：US16265709
申请日：2019-02-01
发明人： Hoyoung Kim , Hyo-Sun Lee , Soojin Kim , Keonyoung Kim , Jinhye Bae , Hoon Han , Tae Soo Kwon , Jung Hun Lim
IPC分类号： C11D3/04 , C11D3/30 , C11D3/44 , H01L21/02 , C11D7/26 , C11D7/08 , C11D7/32 , C11D11/00 , H01L21/683 , H01L23/00 , H01L21/304 , H01L21/306
摘要： Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.
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2.发明授权公开(公告)号：US10332740B2
公开(公告)日：2019-06-25
申请号：US15841946
申请日：2017-12-14
发明人： Hoyoung Kim , Hyo-Sun Lee , Soojin Kim , Keonyoung Kim , Jinhye Bae , Hoon Han , Tae Soo Kwon , Jung Hun Lim
IPC分类号： H01L21/44 , H01L21/02 , C11D7/26 , C11D7/08 , C11D7/32 , C11D11/00 , H01L21/683 , H01L23/00 , H01L21/304 , H01L21/306
摘要： Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less than 90 wt %, quaternary ammonium salt, and primary amine.
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公开(公告)号：US11091696B2
公开(公告)日：2021-08-17
申请号：US16387892
申请日：2019-04-18
发明人： Yongtae Kim , Junghun Lim , Soojin Kim , Jung-Min Oh , Seungmin Jeon , Hayoung Jeon
IPC分类号： C09K13/08 , H01L21/02 , H01L21/306 , H01L29/786 , H01L29/66 , H01L29/06 , H01L29/423
摘要： Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.
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公开(公告)号：US10816828B2
公开(公告)日：2020-10-27
申请号：US15802086
申请日：2017-11-02
发明人： Wonjae Joo , Juhyung Kang , Soojin Kim , Mark L. Brongersma , Shanhui Fan
摘要： A multi-stack graphene structure includes a graphene stack that includes graphene layers including amorphous graphene and thin film dielectric layers. The graphene layers include amorphous graphene. The graphene layers and the thin dielectric layers are alternately stacked on one another. The multi-stack graphene structure also includes an electric field former configured to apply an electric field to the graphene layers.
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公开(公告)号：US11067836B2
公开(公告)日：2021-07-20
申请号：US16557347
申请日：2019-08-30
发明人： Wonjae Joo , Juhyung Kang , Soojin Kim , Mark L. Brongersma , Shanhui Fan
摘要： A multi-stack graphene structure includes a graphene stack that includes graphene layers including amorphous graphene and thin film dielectric layers. The graphene layers include amorphous graphene. The graphene layers and the thin dielectric layers are alternately stacked on one another. The multi-stack graphene structure also includes an electric field former configured to apply an electric field to the graphene layers.
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