专利检索 ap:("Samsung Electronics Co., Ltd." OR "UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)") AND inv:"Soonyong KWON" 第 1 页

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发明申请
THIN-FILM STRUCTURE, SEMICONDUCTOR ELEMENT INCLUDING THE THIN-FILM STRUCTURE, AND METHOD OF MANUFACTURING THE THIN-FILM STRUCTURE 有权

公开(公告)号：US20220302319A1

公开(公告)日：2022-09-22

申请号：US17495457

申请日：2021-10-06

申请人： Samsung Electronics Co., Ltd. , UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

发明人： Changseok LEE , Soonyong KWON , Junghwa KIM , Seungwoo SON , Seunguk SONG , Hyeonjin SHIN , Zonghoon LEE , Yeonchoo CHO

IPC分类号： H01L29/786 , H01L29/16 , H01L29/66 , H01L29/06

摘要： Provided is a thin-film structure including a substrate, a nanocrystalline graphene layer provided on the substrate, and a two-dimensional material layer provided on the nanocrystalline graphene layer. The nucleation density of the two-dimensional material layer is 109 ea/cm2 or more according to the nanocrystalline graphene layer, and accordingly, a two-dimensional material layer having an improved uniformity may be formed and a time duration for forming the two-dimensional material layer may be greatly decreased.