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公开(公告)号：US20210066069A1
公开(公告)日：2021-03-04
申请号：US16885887
申请日：2020-05-28
发明人： Changseok LEE , Hyeonsuk SHIN , Hyeonjin SHIN , Seokmo HONG , Kyungyeol MA
IPC分类号： H01L21/02 , H01L29/08 , H01L29/417 , C23C16/34 , C23C16/02 , C23C16/50 , C30B25/10 , C30B25/16 , C30B29/40
摘要： Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
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2.发明公开公开(公告)号：US20230197837A1
公开(公告)日：2023-06-22
申请号：US18066659
申请日：2022-12-15
发明人： Minsu SEOL , Hyeonsuk SHIN , Kyung-Eun BYUN , Hyuntae HWANG , Changseok LEE , Hyeongjoon KIM
CPC分类号： H01L29/7606 , H01L21/02521 , H01L21/02527 , H01L21/0254 , H01L21/02568 , H01L21/0262 , H01L29/1606 , H01L29/2003 , H01L29/24 , H01L29/267
摘要： Provided are a complex of heterogeneous two-dimensional materials and a method of manufacturing the same. The complex of heterogeneous two-dimensional materials may include a substrate; a first two-dimensional material layer on the substrate and having a two-dimensional crystal structure; and a second two-dimensional material layer between the substrate and the first two-dimensional material layer. The second two-dimensional material layer have a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded to each other.
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公开(公告)号：US20220415800A1
公开(公告)日：2022-12-29
申请号：US17893349
申请日：2022-08-23
发明人： Hyeonjin SHIN , Minhyun LEE , Changseok LEE , Kyung-Eun BYUN , Hyeonsuk SHIN , Seokmo HONG
IPC分类号： H01L23/532 , H01L23/522 , H01L27/108
摘要： A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.
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公开(公告)号：US20210125930A1
公开(公告)日：2021-04-29
申请号：US17082530
申请日：2020-10-28
发明人： Hyeonjin SHIN , Minhyun LEE , Changseok LEE , Kyung-Eun BYUN , Hyeonsuk SHIN , Seokmo HONG
IPC分类号： H01L23/532 , H01L27/108 , H01L23/522
摘要： A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.
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5.发明申请公开(公告)号：US20210123161A1
公开(公告)日：2021-04-29
申请号：US17082502
申请日：2020-10-28
发明人： Changseok LEE , Hyeonsuk SHIN , Hyeonjin SHIN , Seokmo HONG , Minhyun LEE , Seunggeol NAM , Kyungyeol MA
摘要： A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
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6.发明公开公开(公告)号：US20230272554A1
公开(公告)日：2023-08-31
申请号：US18298692
申请日：2023-04-11
发明人： Changseok LEE , Hyeonsuk SHIN , Hyeonjin SHIN , Seokmo HONG , Minhyun LEE , Seunggeol NAM , Kyungyeol MA
CPC分类号： C30B29/38 , H01L21/02172 , H01L21/02252 , H01L21/02293
摘要： A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
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公开(公告)号：US20220415801A1
公开(公告)日：2022-12-29
申请号：US17902319
申请日：2022-09-02
发明人： Hyeonjin SHIN , Minhyun LEE , Changseok LEE , Hyeonsuk SHIN , Seokmo HONG
IPC分类号： H01L23/532 , H01L23/522
摘要： An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.
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公开(公告)号：US20220157947A1
公开(公告)日：2022-05-19
申请号：US17398515
申请日：2021-08-10
发明人： Minsu SEOL , Hyeonsuk SHIN , Hyeonjin SHIN , Hyuntae HWANG , Changseok LEE , Seongin YOON
摘要： Provided are a black phosphorus-two dimensional material complex and a method of manufacturing the black phosphorus-two dimensional material complex. The black phosphorus-two dimensional material complex includes: first and second two-dimensional material layers, which each have a two-dimensional crystal structure and are coupled to each other by van der Waals force; and a black phosphorus sheet which between the first and second two-dimensional material layers and having a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded.
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公开(公告)号：US20220302319A1
公开(公告)日：2022-09-22
申请号：US17495457
申请日：2021-10-06
发明人： Changseok LEE , Soonyong KWON , Junghwa KIM , Seungwoo SON , Seunguk SONG , Hyeonjin SHIN , Zonghoon LEE , Yeonchoo CHO
IPC分类号： H01L29/786 , H01L29/16 , H01L29/66 , H01L29/06
摘要： Provided is a thin-film structure including a substrate, a nanocrystalline graphene layer provided on the substrate, and a two-dimensional material layer provided on the nanocrystalline graphene layer. The nucleation density of the two-dimensional material layer is 109 ea/cm2 or more according to the nanocrystalline graphene layer, and accordingly, a two-dimensional material layer having an improved uniformity may be formed and a time duration for forming the two-dimensional material layer may be greatly decreased.
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公开(公告)号：US20210125929A1
公开(公告)日：2021-04-29
申请号：US17082494
申请日：2020-10-28
发明人： Hyeonjin SHIN , Minhyun LEE , Changseok LEE , Hyeonsuk SHIN , Seokmo HONG
IPC分类号： H01L23/532 , H01L23/522
摘要： An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.
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