公开(公告)号：US20240203788A1

公开(公告)日：2024-06-20

申请号：US18541091

申请日：2023-12-15

申请人： Samsung electronics CO., LTD. ,  Incheon national university research & business foundation

发明人： Eunhyoung CHO ,  Sunghee Lee ,  Jeongyub Lee ,  Hanboram Lee

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76849 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76861 ,  H01L21/76879

摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.