公开(公告)号：US6007324A

公开(公告)日：1999-12-28

申请号：US166392

申请日：1998-10-05

Applicant: San-De Tzu ,  Shy-Jay Lin ,  Ching-Chia Lin

Inventor： San-De Tzu ,  Shy-Jay Lin ,  Ching-Chia Lin

IPC: G03F1/29 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F1/29 ,  G03F7/203

Abstract: A method of forming a rim type attenuating phase shifting mask which requires only one resist layer and developing the resist using a single developing solution. A transparent mask substrate has a layer of attenuating phase shifting material, a layer of opaque material, and a layer of resist material formed thereon. The layer of resist is exposed to a first pattern using a first exposure dose and a second pattern using a smaller second exposure dose. The resist is developed for a first time forming the first pattern in the entire layer of resist and the second pattern in the top portion of the layer of resist. The first pattern is then etched in the layer of opaque material using the first pattern in the layer of resist as a mask. In one embodiment the first pattern is then etched in the layer of attenuating phase shifting material, the resist is partially etched using an O.sub.2 plasma etch leaving the second pattern in the lower part of the resist, the second pattern is etched in the layer of opaque material, and the resist is stripped. In a second embodiment the layer of resist is developed for a second time in the same solution forming the second pattern in the entire resist layer, the first pattern is etched in the layer of attenuating phase shifting material, the second pattern is etched in the layer of opaque material, and the resist is stripped.

Abstract translation: 一种形成仅需一个抗蚀剂层并使用单一显影液显影抗蚀剂的边缘型衰减相移掩模的方法。 透明掩模基板具有衰减相移材料层，不透明材料层和形成在其上的抗蚀材料层。 使用较小的第二曝光剂量，使用第一曝光剂量和第二图案将抗蚀剂层暴露于第一图案。 抗蚀剂首次在抗蚀剂的整个层中形成第一图案，并且在抗蚀剂层的顶部形成第二图案。 然后使用抗蚀剂层中的第一图案作为掩模，在不透明材料层中蚀刻第一图案。 在一个实施例中，然后在衰减相移材料层中蚀刻第一图案，使用等离子体蚀刻部分蚀刻抗蚀剂，留下抗蚀剂下部的第二图案，第二图案被蚀刻在不透明层中 材料，抗蚀剂剥离。 在第二实施例中，抗蚀剂层在形成整个抗蚀剂层中的第二图案的相同溶液中第二次显影，第一图案在衰减相移材料层中被蚀刻，第二图案在层中被蚀刻 的不透明材料，并且抗蚀剂被剥离。

公开(公告)号：US06630408B1

公开(公告)日：2003-10-07

申请号：US09944910

申请日：2001-09-04

Applicant: San-De Tzu ,  Ching-Chia Lin

Inventor： San-De Tzu ,  Ching-Chia Lin

IPC: H01L21302

CPC classification number: G03F1/32 ,  Y10S438/942 ,  Y10S438/945

Abstract: A new method is provided for the creation of an attenuated phase shifting mask. A transparent mask substrate is provided, a layer of attenuating phase shifting material is deposited on the surface of said transparent mask substrate, a layer of opaque material is deposited on the surface of said layer of attenuating phase shifting material. A layer of photoresist is deposited over the surface of the layer of opaque material. The photoresist is exposed by E-beam, creating a mask pattern and a guard ring pattern in the photoresist. The (E-beam) exposed photoresist is removed, the pattern created in the layer of photoresist is used to etch a mask pattern in the layer of opaque material and the layer of attenuating phase shifting material. The remaining photoresist is exposed to UV radiation in the region of the mask pattern and partially in the region of the guard ring. The (UV) exposed photoresist is removed, the remaining photoresist is reduced in height after which the openings of the mask pattern in the opaque layer are increased in size, the outside edge of the guard ring accurately defines the boundary of the device. The remaining photoresist is removed from the layer of opaque material.

Abstract translation: 提供了一种用于创建衰减相移掩模的新方法。 提供透明掩模基板，在所述透明掩模基板的表面上沉积衰减相移材料层，在所述衰减相变材料层的表面上沉积不透明材料层。 一层光致抗蚀剂沉积在不透明材料层的表面上。 光致抗蚀剂通过电子束曝光，在光致抗蚀剂中产生掩模图案和保护环图案。 去除（电子束）曝光的光致抗蚀剂，在光致抗蚀剂层中产生的图案用于蚀刻不透明材料层和衰减相变材料层中的掩模图案。 剩余的光致抗蚀剂在掩模图案的区域中暴露于UV辐射，并且部分地在保护环的区域中暴露。 （UV）曝光的光致抗蚀剂被去除，剩余的光致抗蚀剂的高度降低，之后不透明层中的掩模图案的开口的尺寸增加，保护环的外边缘准确地限定了装置的边界。 剩余的光致抗蚀剂从不透明材料层去除。

公开(公告)号：US5888678A

公开(公告)日：1999-03-30

申请号：US20502

申请日：1998-02-09

Applicant: San-De Tzu ,  Chia-Hui Lin ,  Wen-Hong Huang ,  Ching-Chia Lin

Inventor： San-De Tzu ,  Chia-Hui Lin ,  Wen-Hong Huang ,  Ching-Chia Lin

IPC: G03F1/00 ,  G03F1/29 ,  G03F9/00

CPC classification number: G03F1/29

Abstract: A mask and a method of forming a mask having a binary mask pattern in a first region of a transparent mask substrate and a rim type attenuating phase shifting mask pattern in a second region of the same transparent mask substrate. The rim type attenuating phase shifting mask pattern is used to form small contact holes and the binary mask pattern is used to form larger contact holes in an integrated circuit wafer. The use of the rim type attenuating phase shifting mask pattern and the binary mask pattern avoids the problems due to side lobe effect for cases where different size contact holes are required on the same layer in an integrated circuit wafer. The formation of the rim type attenuating phase shifting mask pattern and the binary mask pattern on the same transparent mask substrate increases throughput and decreases cost in the fabrication of integrated circuit wafers.

Abstract translation: 在相同的透明掩模基板的第二区域中，在透明掩模基板的第一区域中形成具有二元掩模图案的掩模和边缘型衰减相移掩模图案的掩模和方法。 边缘型衰减相移掩模图案用于形成小的接触孔，并且二进制掩模图案用于在集成电路晶片中形成更大的接触孔。 使用边缘型衰减相移掩模图案和二进制掩模图案避免了在集成电路晶片的同一层上需要不同尺寸的接触孔的情况下由于旁瓣效应引起的问题。 在相同的透明掩模基板上形成边缘型衰减相移掩模图案和二进制掩模图案增加了集成电路晶片的制造中的吞吐量并降低了成本。