公开(公告)号：US08377768B2

公开(公告)日：2013-02-19

申请号：US13293096

申请日：2011-11-09

申请人： Constantin Bulucea ,  William D. French ,  Donald M. Archer ,  Jeng-Jiun Yang ,  Sandeep R. Bahl ,  D. Courtney Parker

发明人： Constantin Bulucea ,  William D. French ,  Donald M. Archer ,  Jeng-Jiun Yang ,  Sandeep R. Bahl ,  D. Courtney Parker

IPC分类号： H01L21/8238

CPC分类号： H01L29/1083 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/518 ,  H01L29/66659 ,  H01L29/7835

摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.

摘要翻译： 一组高性能类似极性的绝缘栅场效应晶体管（100,108,112,116,120和124或102,110,114,118,122和126）具有可选择地不同的侧向源 /漏极延伸，光晕口和栅介质厚度，适用于为模拟和/或数字应用提供各种晶体管的半导体制造平台。 每个晶体管具有一对源极/漏极区，栅极介电层和栅电极。 每个源极/漏极区域包括主要部分和更轻掺杂的横向延伸部分。 一个晶体管的一个源极/漏极区域的横向延伸比另一个晶体管的源极/漏极区域之一的横向延伸更深地掺杂或/并且在上部半导体表面之下更深地延伸。

公开(公告)号：US20100244150A1

公开(公告)日：2010-09-30

申请号：US12382972

申请日：2009-03-27

申请人： Sandeep R. Bahl ,  William D. French ,  Constantin Bulucea

发明人： Sandeep R. Bahl ,  William D. French ,  Constantin Bulucea

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/6659 ,  H01L29/66659

摘要： An insulated-gate field-effect transistor (100) provided along an upper surface of a semiconductor body contains a pair of source/drain zones (240 and 242) laterally separated by a channel zone (244). A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. Each source/drain zone includes a main portion (240M or 242M) and a more lightly doped lateral extension (240E or 242E) laterally continuous with the main portion and extending laterally under the gate electrode. The lateral extensions, which terminate the channel zone along the upper semiconductor surface, are respectively largely defined by a pair of semiconductor dopants of different atomic weights. With the transistor being an asymmetric device, the source/drain zones constitute a source and a drain. The lateral extension of the source is then more lightly doped than, and defined with dopant of higher atomic weight, than the lateral extension of the drain.

摘要翻译： 沿着半导体主体的上表面设置的绝缘栅场效应晶体管（100）包含由沟道区（244）横向隔开的一对源极/漏极区（240和242）。 栅电极（262）覆盖沟道区上方的栅介电层（260）。 每个源极/漏极区域包括与主要部分横向连续并在栅电极下方横向延伸的主要部分（240M或242M）和更轻掺杂的侧向延伸部（240E或242E）。 沿着上半导体表面终止沟道区的横向延伸部分分别由不同原子量的一对半导体掺杂剂限定。 在晶体管是非对称器件的情况下，源极/漏极区域构成源极和漏极。 源极的横向延伸比起漏极的横向延伸稍微掺杂，并且由原子量较高的掺杂剂限定。

公开(公告)号：US08304835B2

公开(公告)日：2012-11-06

申请号：US12382973

申请日：2009-03-27

申请人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

IPC分类号： H01L29/36

CPC分类号： H01L27/088 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics. The combination of empty and filled wells enables the semiconductor fabrication platform to provide a wide variety of high-performance IGFETs from which circuit designers can select particular IGFETs for various analog and digital applications, including mixed-signal applications.

摘要翻译： 作为半导体制造平台的核心的半导体结构具有由电子元件特别是绝缘栅场效应晶体管（IGFET）不同地使用的空阱区域和填充阱区域的组合，以实现期望的电子 特点 相当少量的半导体阱掺杂剂靠近空穴的顶部。 相当数量的半导体阱掺杂剂靠近填充井的顶部。 一些IGFET（100,102,112,114,124和126）利用空井（180,182,192,194,204和206）实现期望的晶体管特性。 其它IGFET（108,110,116,118,120和122）利用填充的孔（188,190,196,198,200和202）实现期望的晶体管特性。 空孔和填充孔的组合使得半导体制造平台能够提供各种各样的高性能IGFET，电路设计者可以从其中选择特定的IGFET用于各种模拟和数字应用，包括混合信号应用。

公开(公告)号：US20100244128A1

公开(公告)日：2010-09-30

申请号：US12382973

申请日：2009-03-27

申请人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L27/088 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics. The combination of empty and filled wells enables the semiconductor fabrication platform to provide a wide variety of high-performance IGFETs from which circuit designers can select particular IGFETs for various analog and digital applications, including mixed-signal applications.

摘要翻译： 作为半导体制造平台的核心的半导体结构具有由电子元件特别是绝缘栅场效应晶体管（“IGFET”）不同地使用的空阱区域和填充阱区域的组合，以实现 所需的电子特性。 相当少量的半导体阱掺杂剂靠近空穴的顶部。 相当数量的半导体阱掺杂剂靠近填充井的顶部。 一些IGFET（100,102,112,114,124和126）利用空井（180,182,192,194,204和206）实现期望的晶体管特性。 其它IGFET（108,110,116,118,120和122）利用填充的孔（188,190,196,198,200和202）实现期望的晶体管特性。 空孔和填充孔的组合使得半导体制造平台能够提供各种各样的高性能IGFET，电路设计者可以从其中选择特定的IGFET用于各种模拟和数字应用，包括混合信号应用。

公开(公告)号：US08304320B2

公开(公告)日：2012-11-06

申请号：US13100192

申请日：2011-05-03

申请人： Sandeep R. Bahl ,  William D. French ,  Constantin Bulucea

发明人： Sandeep R. Bahl ,  William D. French ,  Constantin Bulucea

IPC分类号： H01L21/336 ,  H01L21/8238

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/6659 ,  H01L29/66659

摘要： An insulated-gate field-effect transistor (100) provided along an upper surface of a semiconductor body contains a pair of source/drain zones (240 and 242) laterally separated by a channel zone (244). A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. Each source/drain zone includes a main portion (240M or 242M) and a more lightly doped lateral extension (240E or 242E) laterally continuous with the main portion and extending laterally under the gate electrode. The lateral extensions, which terminate the channel zone along the upper semiconductor surface, are respectively largely defined by a pair of semiconductor dopants of different atomic weights. With the transistor being an asymmetric device, the source/drain zones constitute a source and a drain. The lateral extension of the source is then more lightly doped than, and defined with dopant of higher atomic weight, than the lateral extension of the drain.

摘要翻译： 沿着半导体主体的上表面设置的绝缘栅场效应晶体管（100）包含由沟道区（244）横向隔开的一对源极/漏极区（240和242）。 栅电极（262）覆盖沟道区上方的栅介电层（260）。 每个源极/漏极区域包括与主要部分横向连续并在栅电极下方横向延伸的主要部分（240M或242M）和更轻掺杂的侧向延伸部（240E或242E）。 沿着上半导体表面终止沟道区的横向延伸部分分别由不同原子量的一对半导体掺杂剂限定。 在晶体管是非对称器件的情况下，源极/漏极区域构成源极和漏极。 源极的横向延伸比起漏极的横向延伸稍微掺杂，并且由原子量较高的掺杂剂限定。

公开(公告)号：US20100244152A1

公开(公告)日：2010-09-30

申请号：US12382976

申请日：2009-03-27

申请人： Sandeep R. Bahl ,  Constantin Bulucea ,  William D. French

发明人： Sandeep R. Bahl ,  Constantin Bulucea ,  William D. French

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： An extended-drain insulated-gate field-effect transistor (104 or 106) contains first and second source/drain zones 324 and 184B or 364 and 186B) laterally separated by a channel (322 or 362) zone constituted by part of a first well region (184A or 186A). A gate dielectric layer (344 or 384) overlies the channel zone. A gate electrode (346 or 386) overlies the gate dielectric layer above the channel zone. The first source/drain zone is normally the source. The second S/D zone, normally the drain, is constituted with a second well region (184B or 186B). A well-separating portion 186A or 186B/212U) of the semiconductor body extends between the well regions and is more lightly doped than each well region. The configuration of the well regions cause the maximum electric field in the IGFET's portion of the semiconductor body to occur well below the upper semiconductor surface, typically at or close to where the well regions are closest to each other. The IGFET's operating characteristics are stable with operational time.

摘要翻译： 扩展漏极绝缘栅场效应晶体管（104或106）包含由第一阱的一部分构成的沟道（322或362）区域横向隔开的第一和第二源/漏区324和184B或364和186B， 区域（184A或186A）。 栅极电介质层（344或384）覆盖在沟道区上。 栅电极（346或386）覆盖沟道区上方的栅介质层。 第一个源/漏区通常是源。 第二S / D区（通常为漏极）由第二阱区（184B或186B）构成。 半导体本体的阱分离部分186A或186B / 212U）在阱区之间延伸，并且比每个阱区域轻掺杂。 阱区域的配置导致半导体本体的IGFET的部分中的最大电场远低于上半导体表面，通常处于或接近阱区彼此最接近的位置。 IGFET的运行特性在运行时间稳定。

公开(公告)号：US20100244131A1

公开(公告)日：2010-09-30

申请号：US12382969

申请日：2009-03-27

申请人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

发明人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/265

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/66659 ,  H01L29/7835

摘要： An asymmetric insulated-gate field-effect transistor (100 or 102) has a source (240 or 280) and a drain (242 or 282) laterally separated by a channel zone (244 or 284) of body material (180 or 182) of a semiconductor body. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A more heavily doped pocket portion (250 or 290) of the body material extends largely along only the source. The source has a main source portion (240M or 280M) and a more lightly doped lateral source extension (240E or 280E). The drain has a main portion (242M or 282M) and a more lightly doped lateral drain extension (242E or 282E). The drain extension is more lightly doped than the source extension. The maximum concentration of the semiconductor dopant defining the two extensions occurs deeper in the drain extension than in the source extension. Additionally or alternatively, the drain extension extends further laterally below the gate electrode than the source extension. These features enable the threshold voltage to be highly stable with operational time.

摘要翻译： 不对称绝缘栅场效应晶体管（100或102）具有由主体材料（180或182）的沟道区（244或284）横向隔开的源（240或280）和漏极（242或282） 半导体体。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 主体材料的更加重掺杂的袋部分（250或290）主要仅沿着源头延伸。 源极具有主源部分（240M或280M）和更轻掺杂的侧向源延伸部（240E或280E）。 漏极具有主要部分（242M或282M）和更轻掺杂的侧向漏极延伸部（242E或282E）。 漏极延伸比源极延伸更轻的掺杂。 限定两个延伸的半导体掺杂剂的最大浓度在漏极延伸中比在源极延伸中更深。 另外或替代地，漏极延伸部在栅极电极之下进一步横向延伸，而不是源极延伸部分。 这些特性使得阈值电压在运行时间内稳定。

公开(公告)号：US08629027B1

公开(公告)日：2014-01-14

申请号：US13079646

申请日：2011-04-04

申请人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

发明人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

IPC分类号： H01L27/088

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/66659 ,  H01L29/7835

摘要： An asymmetric insulated-gate field-effect transistor (100 or 102) has a source (240 or 280) and a drain (242 or 282) laterally separated by a channel zone (244 or 284) of body material (180 or 182) of a semiconductor body. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A more heavily doped pocket portion (250 or 290) of the body material extends largely along only the source. The source has a main source portion (240M or 280M) and a more lightly doped lateral source extension (240E or 280E). The drain has a main portion (242M or 282M) and a more lightly doped lateral drain extension (242E or 282E). The drain extension is more lightly doped than the source extension. The maximum concentration of the semiconductor dopant defining the two extensions occurs deeper in the drain extension than in the source extension. Additionally or alternatively, the drain extension extends further laterally below the gate electrode than the source extension. These features enable the threshold voltage to be highly stable with operational time.

摘要翻译： 不对称绝缘栅场效应晶体管（100或102）具有由主体材料（180或182）的沟道区（244或284）横向隔开的源（240或280）和漏极（242或282） 半导体体。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 主体材料的更加重掺杂的袋部分（250或290）主要仅沿着源头延伸。 源极具有主源部分（240M或280M）和更轻掺杂的侧向源延伸部（240E或280E）。 漏极具有主要部分（242M或282M）和更轻掺杂的侧向漏极延伸部（242E或282E）。 漏极延伸比源极延伸更轻的掺杂。 限定两个延伸的半导体掺杂剂的最大浓度在漏极延伸中比在源极延伸中更深。 另外或替代地，漏极延伸部在栅极电极之下进一步横向延伸，而不是源极延伸部分。 这些特性使得阈值电压在运行时间内稳定。

公开(公告)号：US08410549B2

公开(公告)日：2013-04-02

申请号：US12382968

申请日：2009-03-27

申请人： Constantin Bulucea ,  Jeng-Jiun Yang ,  William D. French ,  Sandeep R. Bahl ,  D. Courtney Parker

发明人： Constantin Bulucea ,  Jeng-Jiun Yang ,  William D. French ,  Sandeep R. Bahl ,  D. Courtney Parker

IPC分类号： H01L29/66

CPC分类号： H01L29/0847 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7835

摘要： Insulated-gate field-effect transistors (“IGFETs”), both symmetric and asymmetric, suitable for a semiconductor fabrication platform that provides IGFETs for analog and digital applications, including mixed-signal applications, utilize empty-well regions in achieving high performance. A relatively small amount of semiconductor well dopant is near the top of each empty well. Each IGFET (100, 102, 112, 114, 124, or 126) has a pair of source/drain zones laterally separated by a channel zone of body material of the empty well (180, 182, 192, 194, 204, or 206). A gate electrode overlies a gate dielectric layer above the channel zone. Each source/drain zone (240, 242, 280, 282, 520, 522, 550, 552, 720, 722, 752, or 752) has a main portion (240M, 242M, 280M, 282M, 520M, 522M, 550M, 552M, 720M, 722M, 752M, or 752M) and a more lightly doped lateral extension (240E, 242E, 280E, 282E, 520E, 522E, 550E, 552E, 720E, 722E, 752E, or 752E). Alternatively or additionally, a more heavily doped pocket portion (250 or 290) of the body material extends along one of the source/drain zones. When present, the pocket portion typically causes the IGFET to be an asymmetric device.

摘要翻译： 对称和非对称的绝缘栅场效应晶体管（IGFET）适用于为模拟和数字应用（包括混合信号应用）提供IGFET的半导体制造平台，利用空井区域实现高性能。 相对少量的半导体阱掺杂剂在每个空的孔的顶部附近。 每个IGFET（100,102,112,114,124或126）具有由空井（180,182,192,194,204或206）的主体材料的通道区横向隔开的一对源/排出区 ）。 栅极电极覆盖在沟道区上方的栅极电介质层。 每个源/漏区（240,242,282,282,520,522,550,552,720,722,752或752）具有主要部分（240M，242M，280M，282M，520M，522M，550M， 552M，720M，722M，752M或752M）和更轻掺杂的侧向延伸部（240E，242E，280E，282E，520E，522E，550E，552E，720E，722E，752E或752E）。 替代地或另外地，主体材料的更加掺杂的凹穴部分（250或290）沿着源极/漏极区域中的一个延伸。 当存在时，口袋部分通常使IGFET成为非对称装置。

公开(公告)号：US20120184077A1

公开(公告)日：2012-07-19

申请号：US13100192

申请日：2011-05-03

申请人： Sandeep R. Bahl ,  William D. French ,  Constantin Bulucea

发明人： Sandeep R. Bahl ,  William D. French ,  Constantin Bulucea

IPC分类号： H01L21/336

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/6659 ,  H01L29/66659

摘要： An insulated-gate field-effect transistor (100) provided along an upper surface of a semiconductor body contains a pair of source/drain zones (240 and 242) laterally separated by a channel zone (244). A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. Each source/drain zone includes a main portion (240M or 242M) and a more lightly doped lateral extension (240E or 242E) laterally continuous with the main portion and extending laterally under the gate electrode. The lateral extensions, which terminate the channel zone along the upper semiconductor surface, are respectively largely defined by a pair of semiconductor dopants of different atomic weights. With the transistor being an asymmetric device, the source/drain zones constitute a source and a drain. The lateral extension of the source is then more lightly doped than, and defined with dopant of higher atomic weight, than the lateral extension of the drain.

摘要翻译： 沿着半导体主体的上表面设置的绝缘栅场效应晶体管（100）包含由沟道区（244）横向隔开的一对源极/漏极区（240和242）。 栅电极（262）覆盖沟道区上方的栅介电层（260）。 每个源极/漏极区域包括主要部分（240M或242M）和与主要部分横向连续并在栅电极下方横向延伸的更轻掺杂的横向延伸部（240E或242E）。 沿着上半导体表面终止沟道区的横向延伸部分分别由不同原子量的一对半导体掺杂剂限定。 在晶体管是非对称器件的情况下，源极/漏极区域构成源极和漏极。 源极的横向延伸比起漏极的横向延伸稍微掺杂，并且由原子量较高的掺杂剂限定。