公开(公告)号：US20130119345A1

公开(公告)日：2013-05-16

申请号：US13495045

申请日：2012-06-13

申请人： Sang Ho PARK ,  Young Ki SHIN ,  Yoon Ho KHANG ,  Joo Hyung LEE ,  Hyung Woo LEE ,  Seung Hun HONG

发明人： Sang Ho PARK ,  Young Ki SHIN ,  Yoon Ho KHANG ,  Joo Hyung LEE ,  Hyung Woo LEE ,  Seung Hun HONG

IPC分类号： H01L29/775 ,  H01L33/04

CPC分类号： H01L27/283 ,  B82Y10/00 ,  H01L27/3274 ,  H01L51/0048 ,  H01L51/0558

摘要： A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.

摘要翻译： 薄膜晶体管包括被配置为接收控制电压的栅电极，与栅电极绝缘的源电极，并且被配置为接收输入电压，与栅电极绝缘的漏电极，并且被配置为接收输出电压， 在源电极和漏电极之间的沟道区域中形成的至少两个碳纳米管图案，其中碳纳米管图案彼此分离，以及至少一个将两个碳纳米管图案彼此连接的浮动电极。