摘要:
Provided is a method of manufacturing a thin film transistor (TFT) including a transparent ZnO thin layer that is formed at a low temperature by causing a surface chemical reaction between precursors containing elements constituting the ZnO thin layer. The method includes the steps of: depositing a gate metal layer on a substrate and forming a gate electrode using photolithography and selective etching processes; depositing a gate insulator on the substrate having the gate electrode; forming source and drain electrodes; and depositing a ZnO thin layer on the gate insulator using a surface chemical reaction between precursors containing elements constituting the ZnO thin layer.
摘要:
Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.
摘要:
Provided is a white organic light emitting device capable of realizing characteristics of excellent color purity and high efficiency through structural simplification. The white organic light emitting device includes an emission layer, a hole blocking layer and an electron transport layer which are deposited between an anode and an cathode to which a bias is applied, wherein a host having a blue luminescence property and a first guest having any one of orange and red luminescence properties are doped into the emission layer, and a material having a green luminescence property is included in the electron transport layer.