公开(公告)号：US07598168B2

公开(公告)日：2009-10-06

申请号：US11033208

申请日：2005-01-11

申请人： Sang-cheol Han ,  Kyoung-woo Lee ,  Mi-young Kim

发明人： Sang-cheol Han ,  Kyoung-woo Lee ,  Mi-young Kim

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829

摘要： A method of forming a dual damascene semiconductor interconnection and an etchant composition specially adapted for stripping a sacrificial layer in a dual damascene fabrication process without profile damage to a dual damascene pattern are provided. The method includes sequentially forming a first etch stop layer, a first intermetal dielectric, a second intermetal dielectric, and a capping layer on a surface of a semiconductor substrate on which a lower metal wiring is formed; etching the first intermetal dielectric, the second intermetal dielectric, and the capping layer to form a via; forming a sacrificial layer within the via; etching the sacrificial layer, the second intermetal dielectric, and the capping layer to form a trench; removing the sacrificial layer remaining around the via using an etchant composition including NH4F, HF, H2O and a surfactant; and forming an upper metal wiring within the thus formed dual damascene pattern including the via and the trench. The preferred etchant composition for stripping a sacrificial layer in the foregoing dual damascene process consists essentially of NH4F, HF, H2O and a surfactant.

摘要翻译： 提供了形成双镶嵌半导体互连的方法和特别适于在双镶嵌制造工艺中剥离牺牲层而不对双镶嵌图案造成损伤的蚀刻剂组合物。 该方法包括在其上形成有下金属布线的半导体衬底的表面上顺序地形成第一蚀刻停止层，第一金属间电介质，第二金属间电介质和覆盖层; 蚀刻第一金属间电介质，第二金属间电介质和封盖层以形成通孔; 在通孔内形成牺牲层; 蚀刻牺牲层，第二金属间电介质和覆盖层以形成沟槽; 使用包括NH 4 F，HF，H 2 O和表面活性剂的蚀刻剂组合物除去残留在通孔周围的牺牲层; 以及在由此形成的包括通孔和沟槽的双镶嵌图案中形成上金属布线。 用于剥离前述双镶嵌工艺中的牺牲层的优选蚀刻剂组合物基本上由NH 4 F，HF，H 2 O和表面活性剂组成。

公开(公告)号：US20050176243A1

公开(公告)日：2005-08-11

申请号：US11033208

申请日：2005-01-11

申请人： Sang-cheol Han ,  Kyoung-woo Lee ,  Mi-young Kim

发明人： Sang-cheol Han ,  Kyoung-woo Lee ,  Mi-young Kim

IPC分类号： H01L21/28 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829

摘要： A method of forming a dual damascene semiconductor interconnection and an etchant composition specially adapted for stripping a sacrificial layer in a dual damascene fabrication process without profile damage to a dual damascene pattern are provided. The method includes sequentially forming a first etch stop layer, a first intermetal dielectric, a second intermetal dielectric, and a capping layer on a surface of a semiconductor substrate on which a lower metal wiring is formed; etching the first intermetal dielectric, the second intermetal dielectric, and the capping layer to form a via; forming a sacrificial layer within the via; etching the sacrificial layer, the second intermetal dielectric, and the capping layer to form a trench; removing the sacrificial layer remaining around the via using an etchant composition including NH4F, HF, H2O and a surfactant; and forming an upper metal wiring within the thus formed dual damascene pattern including the via and the trench. The preferred etchant composition for stripping a sacrificial layer in the foregoing dual damascene process consists essentially of NH4F, HF, H2O and a surfactant.

摘要翻译： 提供了形成双镶嵌半导体互连的方法和特别适于在双镶嵌制造工艺中剥离牺牲层而不对双镶嵌图案造成损伤的蚀刻剂组合物。 该方法包括在其上形成有下金属布线的半导体衬底的表面上顺序地形成第一蚀刻停止层，第一金属间电介质，第二金属间电介质和覆盖层; 蚀刻第一金属间电介质，第二金属间电介质和封盖层以形成通孔; 在通孔内形成牺牲层; 蚀刻牺牲层，第二金属间电介质和覆盖层以形成沟槽; 使用包括NH 4 F，HF，H 2 O和表面活性剂的蚀刻剂组合物除去残留在通孔周围的牺牲层; 以及在由此形成的包括通孔和沟槽的双镶嵌图案中形成上金属布线。 用于剥离前述双镶嵌方法中的牺牲层的优选蚀刻剂组合物基本上由NH 4 F，HF，H 2 O和表面活性剂组成。