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公开(公告)号：US08802535B2
公开(公告)日：2014-08-12
申请号：US13461935
申请日：2012-05-02
IPC分类号： H01L21/331
CPC分类号： H01L29/772 , H01L29/66795 , H01L29/7854
摘要： Techniques for fabricating a field effect transistor (FET) device having a doped core and an undoped or counter-doped epitaxial shell are provided. In one aspect, a method of fabricating a FET device is provided. The method includes the following steps. A wafer is provided having a semiconductor material selected from the group consisting of silicon, silicon germanium and silicon carbon. At least one fin core is formed in the wafer. Ion implantation is used to dope the fin core. Corners of the fin core are reshaped to make the corners rounded or faceted. An epitaxial shell is grown surrounding the fin core, wherein the epitaxial shell includes a semiconductor material selected from the group consisting of silicon, silicon germanium and silicon carbon.
摘要翻译： 提供了用于制造具有掺杂芯和未掺杂或反掺杂外延壳的场效应晶体管（FET）器件的技术。 一方面，提供一种制造FET器件的方法。 该方法包括以下步骤。 提供具有选自硅，硅锗和硅碳的半导体材料的晶片。 在晶片中形成至少一个鳍芯。 离子注入用于掺杂鳍芯。 鳍芯的角部重新成形，使角落圆角或圆形。 围绕鳍芯生长外延壳，其中外延壳包括选自硅，硅锗和硅碳的半导体材料。
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公开(公告)号：US20130292701A1
公开(公告)日：2013-11-07
申请号：US13461935
申请日：2012-05-02
IPC分类号： H01L29/772 , H01L21/02 , H01L21/20
CPC分类号： H01L29/772 , H01L29/66795 , H01L29/7854
摘要： Techniques for fabricating a field effect transistor (FET) device having a doped core and an undoped or counter-doped epitaxial shell are provided. In one aspect, a method of fabricating a FET device is provided. The method includes the following steps. A wafer is provided having a semiconductor material selected from the group consisting of silicon, silicon germanium and silicon carbon. At least one fin core is formed in the wafer. Ion implantation is used to dope the fin core. Corners of the fin core are reshaped to make the corners rounded or faceted. An epitaxial shell is grown surrounding the fin core, wherein the epitaxial shell includes a semiconductor material selected from the group consisting of silicon, silicon germanium and silicon carbon.
摘要翻译： 提供了用于制造具有掺杂芯和未掺杂或反掺杂外延壳的场效应晶体管（FET）器件的技术。 一方面，提供一种制造FET器件的方法。 该方法包括以下步骤。 提供具有选自硅，硅锗和硅碳的半导体材料的晶片。 在晶片中形成至少一个鳍芯。 离子注入用于掺杂鳍芯。 鳍芯的角部重新成形，使角落圆角或圆形。 围绕鳍芯生长外延壳，其中外延壳包括选自硅，硅锗和硅碳的半导体材料。
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公开(公告)号：US09893212B2
公开(公告)日：2018-02-13
申请号：US13291596
申请日：2011-11-08
CPC分类号： H01L29/93 , B82Y10/00 , B82Y40/00 , H01L28/40 , H01L29/1606
摘要： A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.
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