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公开(公告)号:US08722492B2
公开(公告)日:2014-05-13
申请号:US12684280
申请日:2010-01-08
IPC分类号: H01L21/336 , H01L21/8234 , H01L21/04 , H01L29/06
CPC分类号: H01L21/047 , B82Y10/00 , H01L29/0665 , H01L29/0669 , H01L29/42312 , H01L29/66356 , H01L29/7391
摘要: A method for forming a nanowire tunnel device includes forming a nanowire suspended by a first pad region and a second pad region over a semiconductor substrate, forming a gate structure around a channel region of the nanowire, implanting a first type of ions at a first oblique angle in a first portion of the nanowire and the first pad region, and implanting a second type of ions at a second oblique angle in a second portion of the nanowire and the second pad region.
摘要翻译: 形成纳米线隧道器件的方法包括:在半导体衬底上形成由第一衬垫区域和第二焊盘区域悬置的纳米线,在纳米线的沟道区域周围形成栅极结构,在第一斜面上注入第一类型的离子 在纳米线和第一焊盘区域的第一部分中的角度,以及在纳米线和第二焊盘区域的第二部分中以第二倾斜角度注入第二类型的离子。
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公开(公告)号:US09105482B2
公开(公告)日:2015-08-11
申请号:US13556300
申请日:2012-07-24
IPC分类号: H01L21/00 , H01L21/04 , B82Y10/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/739
CPC分类号: H01L21/047 , B82Y10/00 , H01L29/0665 , H01L29/0669 , H01L29/42312 , H01L29/66356 , H01L29/7391
摘要: A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.
摘要翻译: 纳米线隧道器件包括通过第一焊盘区域和第二焊盘区域悬置在半导体衬底上方的纳米线,所述纳米线具有由围绕纳米线周向设置的栅极结构围绕的沟道部分,n型掺杂区域,包括第一部分 和与沟道部分相邻的纳米线的第二部分的p型掺杂区域。
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