公开(公告)号：US20100213351A1

公开(公告)日：2010-08-26

申请号：US12710927

申请日：2010-02-23

申请人： Tsuyoshi Iwamoto ,  Satoshi Masuda ,  Masayuki Kusuda

发明人： Tsuyoshi Iwamoto ,  Satoshi Masuda ,  Masayuki Kusuda

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H04N5/363 ,  H04N5/3743 ,  H04N5/37457

摘要： A solid state image sensor and an image sensing apparatus incorporated with the solid state image sensor include: pixel arrays each provided with pixels, and an accumulating section e.g. a capacitor CX which sums up and accumulates signal charges obtained by exposure of an object with respect to a corresponding color at different timings when the signal charges are obtained by the pixels of each of the pixel arrays. A reset noise of a converting floating diffusion is outputted after the converting floating diffusion is reset. Thereafter, a summation of the reset noise, and the signal charges accumulated in the accumulating section is outputted.

摘要翻译： 固态图像传感器和结合有固体图像传感器的图像感测装置包括：各自提供有像素的像素阵列，以及累积部分，例如， 电容器CX，其通过每个像素阵列的像素获得信号电荷时，对不同的定时相对于对应的颜色进行曝光而累加并积累信号电荷。 在转换浮动扩散复位之后，输出转换浮动扩散的复位噪声。 此后，输出复位噪声和积累部分中积累的信号电荷的总和。

公开(公告)号：US20120019699A1

公开(公告)日：2012-01-26

申请号：US13262545

申请日：2010-03-19

申请人： Satoshi Masuda ,  Masayuki Kusuda

发明人： Satoshi Masuda ,  Masayuki Kusuda

IPC分类号： H04N5/335

CPC分类号： H04N5/363 ,  H01L27/14609 ,  H01L27/14623

摘要： A trace control unit 61 traces photoelectric conversion characteristics of dummy pixels G2 by varying a current value outputted from constant current sources Id. The constant current sources Id are provided common to respective rows in a dummy pixel section 12 and output a current value according to a setting signal outputted from the trace control unit 61. At this point, the trace control unit 61 instructs a vertical scan circuit 2 to turn off a switch ISW during a predetermined read period in which a read circuit 3 reads pixel signals from the dummy pixels G2.

摘要翻译： 跟踪控制单元61通过改变从恒定电流源Id输出的电流值来跟踪虚拟像素G2的光电转换特性。 恒定电流源Id被提供在虚拟像素部分12中的相应行共同，并且根据从跟踪控制单元61输出的设置信号输出当前值。此时，跟踪控制单元61指示垂直扫描电路2 在读取电路3从伪像素G2读取像素信号的预定读取周期期间关闭开关ISW。

公开(公告)号：US08487232B2

公开(公告)日：2013-07-16

申请号：US12710927

申请日：2010-02-23

申请人： Tsuyoshi Iwamoto ,  Satoshi Masuda ,  Masayuki Kusuda

发明人： Tsuyoshi Iwamoto ,  Satoshi Masuda ,  Masayuki Kusuda

IPC分类号： H01L27/00 ,  H04N3/14

CPC分类号： H01L27/14609 ,  H04N5/363 ,  H04N5/3743 ,  H04N5/37457

摘要： A solid state image sensor and an image sensing apparatus incorporated with the solid state image sensor include: pixel arrays each provided with pixels, and an accumulating section e.g. a capacitor CX which sums up and accumulates signal charges obtained by exposure of an object with respect to a corresponding color at different timings when the signal charges are obtained by the pixels of each of the pixel arrays. A reset noise of a converting floating diffusion is outputted after the converting floating diffusion is reset. Thereafter, a summation of the reset noise, and the signal charges accumulated in the accumulating section is outputted.

摘要翻译： 固态图像传感器和结合有固体图像传感器的图像感测装置包括：各自提供有像素的像素阵列，以及累积部分，例如， 电容器CX，其通过每个像素阵列的像素获得信号电荷时，对不同的定时相对于对应的颜色进行曝光而累加并积累信号电荷。 在转换浮动扩散复位之后，输出转换浮动扩散的复位噪声。 此后，输出复位噪声和积累部分中积累的信号电荷的总和。

公开(公告)号：US07839442B2

公开(公告)日：2010-11-23

申请号：US11236388

申请日：2005-09-27

申请人： Tomokazu Kakumoto ,  So Yano ,  Masayuki Kusuda ,  Kazuchika Sato ,  Yoshihiro Tanaka

发明人： Tomokazu Kakumoto ,  So Yano ,  Masayuki Kusuda ,  Kazuchika Sato ,  Yoshihiro Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/3653

摘要： An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5configured to be applied a DC voltage VRS. Here, a signal Φ V is given, an MOS transistor T4is turned on, and image data is output. A signal Φ RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.

摘要翻译： 本发明的目的是提供一种固态图像感测装置，其被配置为在复位时改变给予光电转换部的偏置电压，从而能够维持复位后的光电转换部的工作状态 恒定条件，而不管入射光的量如何。 为了实现该目的，提供了MOS晶体管T5。 MOS晶体管T5的漏极与MOS晶体管T2的栅极和漏极连接，并且MOS晶体管T5的源极配置为施加直流电压VRS。 这里，给出信号ΦV，MOS晶体管T4导通，并输出图像数据。 给出信号ΦRS并且MOS晶体管T5导通。 结果，MOS晶体管T2的栅极电压Vg被保持为恒定电压值。 然后，对像素进行复位操作。

公开(公告)号：US20080303928A1

公开(公告)日：2008-12-11

申请号：US12132322

申请日：2008-06-03

申请人： Masayuki Kusuda

发明人： Masayuki Kusuda

IPC分类号： H04N5/335

CPC分类号： H04N5/3651 ,  H04N5/35518 ,  H04N5/35527

摘要： To provide an image pickup device and an image pickup apparatus which are equipped with a linear-log sensor which can cancel variations between pixels in an inflection point caused by variations in a threshold of the transistors constituting a logarithmic conversion circuit while using a circuit constitution similar to a pixel circuit of an image pickup device having only an ordinary linear characteristic. When the photoelectric charge accumulated in a photoelectric conversion element is removed, a charge removing transistor is controlled such that the potential of the channel of the charge removing transistor is set to be higher than the minimum potential of the photoelectric conversion element.

摘要翻译： 提供一种图像拾取装置和图像拾取装置，其配备有线性对数传感器，其可以消除由构成对数转换电路的晶体管的阈值变化引起的拐点中的像素之间的变化，同时使用类似的电路结构 涉及仅具有普通线性特征的图像拾取装置的像素电路。 当光电转换元件中累积的光电荷被去除时，控制电荷去除晶体管使得电荷去除晶体管的沟道的电位被设定为高于光电转换元件的最小电位。

公开(公告)号：US07087881B2

公开(公告)日：2006-08-08

申请号：US10614480

申请日：2003-07-07

申请人： Masayuki Kusuda

发明人： Masayuki Kusuda

IPC分类号： G01J1/44 ,  H01L27/00

CPC分类号： H04N5/35518 ,  H04N5/335 ,  H04N5/3653

摘要： In order to provide a solid state image pickup device in which an offset voltage in an image signal from which a noise signal is removed is made to be low, when an image pickup operation is performed while the MOS transistor T1 is ON, after a signal φVD with a value Vh is integrated by a capacitor C, the signal φVD is Vm (Vm

摘要翻译： 为了提供一种固态图像拾取装置，其中将去除了噪声信号的图像信号中的偏移电压设置得较低，当在MOS晶体管T1导通时执行图像拾取操作时，在a 具有值Vh的信号phiVD由电容器C积分，信号phiVD是Vm（Vm

公开(公告)号：US20050052547A1

公开(公告)日：2005-03-10

申请号：US10773882

申请日：2004-02-06

申请人： Jun Minakuti ,  Koichi Kamon ,  Masayuki Kusuda

发明人： Jun Minakuti ,  Koichi Kamon ,  Masayuki Kusuda

IPC分类号： H04N1/46 ,  H04N9/73

CPC分类号： H04N9/735

摘要： A database obtained based on the photoelectric conversion characteristics for R and G signals and a database obtained based on the photoelectric conversion characteristics for G and B signals are stored in LUTs respectively. Signal value calculators read out the databases from the LUTs respectively and perform white balance processing on the R and B signals respectively.

摘要翻译： 基于R和G信号的光电转换特性获得的数据库和基于G和B信号的光电转换特性获得的数据库分别存储在LUT中。 信号值计算器分别从LUT读出数据库，分别对R和B信号执行白平衡处理。

公开(公告)号：US08330843B2

公开(公告)日：2012-12-11

申请号：US12100813

申请日：2008-04-10

申请人： Tsuyoshi Iwamoto ,  Koichi Kamon ,  Masayuki Kusuda ,  Shigehiro Miyatake

发明人： Tsuyoshi Iwamoto ,  Koichi Kamon ,  Masayuki Kusuda ,  Shigehiro Miyatake

IPC分类号： H04N5/235

CPC分类号： H04N5/363 ,  H04N5/35518 ,  H04N5/3745

摘要： In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.

摘要翻译： 在固态图像感测装置中，驱动固态摄像装置的方法以及与本发明的固体摄像装置结合的图像感测系统，具有两个以上不同的光电转换特性的像素信号， 通过使用相对于用于输出被放大的像素信号的每个光电转换特性的模拟增益来放大从像素部分输出。 这使得能够在抑制帧频降低的同时再现具有宽动态范围的图像。

公开(公告)号：US20120211642A1

公开(公告)日：2012-08-23

申请号：US13504466

申请日：2009-10-18

申请人： Tsuyoshi Iwamoto ,  Takashi Morimoto ,  Masayuki Kusuda

发明人： Tsuyoshi Iwamoto ,  Takashi Morimoto ,  Masayuki Kusuda

IPC分类号： H01L27/148

CPC分类号： H04N5/378 ,  H01L27/14603 ,  H04N5/35509 ,  H04N5/35527 ,  H04N5/3575

摘要： Provided is a solid-state imaging device comprising a plurality of pixel circuits GC having photoelectric conversion characteristics including linear characteristics and logarithmic characteristics on either side of an inflection point. The pixel circuits GC each include a photoelectric conversion element PD which accumulates a signal charge by exposing a subject, and a floating diffusion FD which converts the signal charge accumulated by the photoelectric conversion element PD into a voltage signal. The floating diffusion FD is set to have an operating charge that is smaller than a saturation charge of the photoelectric conversion element PD.

摘要翻译： 提供了一种固态成像装置，其包括具有包括拐点两侧的线性特性和对数特性的光电转换特性的多个像素电路GC。 像素电路GC各自包括通过使被摄体曝光来积累信号电荷的光电转换元件PD和将由光电转换元件PD累积的信号电荷转换为电压信号的浮动扩散FD。 浮动扩散部FD被设定为具有小于光电转换元件PD的饱和电荷的工作电荷。

公开(公告)号：US08223240B2

公开(公告)日：2012-07-17

申请号：US12132322

申请日：2008-06-03

申请人： Masayuki Kusuda

发明人： Masayuki Kusuda

IPC分类号： H04N5/335 ,  H04N3/14

CPC分类号： H04N5/3651 ,  H04N5/35518 ,  H04N5/35527

摘要： To provide an image pickup device and an image pickup apparatus which are equipped with a linear-log sensor which can cancel variations between pixels in an inflection point caused by variations in a threshold of the transistors constituting a logarithmic conversion circuit while using a circuit constitution similar to a pixel circuit of an image pickup device having only an ordinary linear characteristic. When the photoelectric charge accumulated in a photoelectric conversion element is removed, a charge removing transistor is controlled such that the potential of the channel of the charge removing transistor is set to be higher than the minimum potential of the photoelectric conversion element.

摘要翻译： 提供一种图像拾取装置和图像拾取装置，其配备有线性对数传感器，其可以消除由构成对数转换电路的晶体管的阈值变化引起的拐点中的像素之间的变化，同时使用类似的电路结构 涉及仅具有普通线性特征的图像拾取装置的像素电路。 当光电转换元件中累积的光电荷被去除时，控制电荷去除晶体管使得电荷去除晶体管的沟道的电位被设定为高于光电转换元件的最小电位。