公开(公告)号：US07741677B2

公开(公告)日：2010-06-22

申请号：US12486944

申请日：2009-06-18

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/113

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US07897467B2

公开(公告)日：2011-03-01

申请号：US12784876

申请日：2010-05-21

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US07335561B2

公开(公告)日：2008-02-26

申请号：US10496825

申请日：2001-11-30

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L27/092

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US07186604B2

公开(公告)日：2007-03-06

申请号：US10519799

申请日：2002-08-15

申请人： Satoshi Sakai ,  Satoshi Yamamoto ,  Atsushi Hiraiwa ,  Ryoichi Furukawa

发明人： Satoshi Sakai ,  Satoshi Yamamoto ,  Atsushi Hiraiwa ,  Ryoichi Furukawa

IPC分类号： H01L21/8238

CPC分类号： H01L29/513 ,  H01L21/823857

摘要： After forming a silicon oxide film 9 on the surface of a region A of a semiconductor substrate 1, a high dielectric constant insulating film 10, a silicon film, a silicon oxide film 14 are successively deposited over the semiconductor substrate 1, and they are patterned to leave the silicon oxide film 14 in regions for forming gate electrodes. Then, after fabricating silicon films 13n and 13p by using the patterned silicon oxide film 14 as a mask, when removing the silicon oxide film 14, etching is performed under the condition where the etching selectivity of the silicon oxide film 14 to the high dielectric constant insulating film 10 becomes large, thereby leaving the high dielectric constant insulating film 10 also to portions below the end of the gate electrodes (13n, 13p). Thus, it is possible to ensure the voltage withstanding thereof and improve the characteristics of MISFET.

摘要翻译： 在半导体衬底1的区域A的表面上形成氧化硅膜9之后，在半导体衬底1上依次沉积高介电常数绝缘膜10，硅膜，氧化硅膜14，并将其图案化 以将氧化硅膜14留在用于形成栅电极的区域中。 然后，通过使用图案化氧化硅膜14作为掩模来制造硅膜13 n和13 p之后，当去除氧化硅膜14时，在氧化硅膜14的蚀刻选择性高的条件下进行蚀刻 介电常数绝缘膜10变大，从而将高介电常数绝缘膜10也留在栅电极（13n，13p）的端部下方的部分。 因此，可以确保其耐受电压并改善MISFET的特性。

公开(公告)号：US20100227446A1

公开(公告)日：2010-09-09

申请号：US12784876

申请日：2010-05-21

申请人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L21/8234

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US07560772B2

公开(公告)日：2009-07-14

申请号：US11963846

申请日：2007-12-23

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L29/76 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US20080105923A1

公开(公告)日：2008-05-08

申请号：US11963846

申请日：2007-12-23

申请人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi SAKAI ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L27/088

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US20060121740A1

公开(公告)日：2006-06-08

申请号：US10519799

申请日：2002-08-15

申请人： Satoshi Sakai ,  Satoshi Yamamoto ,  Atsushi Hiraiwa ,  Ryoichi Furukawa

发明人： Satoshi Sakai ,  Satoshi Yamamoto ,  Atsushi Hiraiwa ,  Ryoichi Furukawa

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L29/513 ,  H01L21/823857

摘要： After forming a silicon oxide film 9 on the surface of a region A of a semiconductor substrate 1, a high dielectric constant insulating film 10, a silicon film, a silicon oxide film 14 are successively deposited over the semiconductor substrate 1, and they are patterned to leave the silicon oxide film 14 in regions for forming gate electrodes. Then, after fabricating silicon films 13n and 13p by using the patterned silicon oxide film 14 as a mask, when removing the silicon oxide film 14, etching is performed under the condition where the etching selectivity of the silicon oxide film 14 to the high dielectric constant insulating film 10 becomes large, thereby leaving the high dielectric constant insulating film 10 also to portions below the end of the gate electrodes (13n, 13p). Thus, it is possible to ensure the voltage withstanding thereof and improve the characteristics of MISFET.

摘要翻译： 在半导体衬底1的区域A的表面上形成氧化硅膜9之后，在半导体衬底1上依次沉积高介电常数绝缘膜10，硅膜，氧化硅膜14，并将其图案化 以将氧化硅膜14留在用于形成栅电极的区域中。 然后，通过使用图案化氧化硅膜14作为掩模来制造硅膜13 n和13 p之后，当去除氧化硅膜14时，在氧化硅膜14的蚀刻选择性高的条件下进行蚀刻 介电常数绝缘膜10变大，从而将高介电常数绝缘膜10也留在栅电极（13n，13p）的端部下方的部分。 因此，可以确保其耐受电压并改善MISFET的特性。

公开(公告)号：US20050045959A1

公开(公告)日：2005-03-03

申请号：US10496825

申请日：2001-11-30

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L21/8238 ,  H01L27/088 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US06821854B2

公开(公告)日：2004-11-23

申请号：US10211262

申请日：2002-08-05

申请人： Takayuki Kanda ,  Atsushi Hiraiwa ,  Norio Suzuki ,  Satoshi Sakai ,  Shuji Ikeda ,  Yasuko Yoshida ,  Shinichi Horibe

发明人： Takayuki Kanda ,  Atsushi Hiraiwa ,  Norio Suzuki ,  Satoshi Sakai ,  Shuji Ikeda ,  Yasuko Yoshida ,  Shinichi Horibe

IPC分类号： H01L218234

CPC分类号： H01L21/823878 ,  H01L21/823857

摘要： A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

摘要翻译： 在形成于半导体基板的表面的氧化硅膜6上形成保护膜，利用光刻胶图案作为掩模，从要形成薄栅极绝缘膜的区域去除氧化硅膜 覆盖要形成厚栅极绝缘膜的区域，然后去除光致抗蚀剂图案，然后洗涤。 然后，半导体衬底被热氧化或在其上沉积膜以形成具有不同厚度的栅极绝缘膜。